DatasheetsPDF.com

Schottky Rectifier. VF20100SG Datasheet

DatasheetsPDF.com

Schottky Rectifier. VF20100SG Datasheet






VF20100SG Rectifier. Datasheet pdf. Equivalent




VF20100SG Rectifier. Datasheet pdf. Equivalent





Part

VF20100SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


V20100SG, VF20100SG, VB20100SG, VI20100S G www.vishay.com Vishay General Semic onductor High Voltage Trench MOS Barri er Schottky Rectifier Ultra Low VF = 0. 50 V at IF = 5 A TO-220AB TMBS ® IT O-220AB V20100SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20100 SG PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100SG NC K A HEATSINK VI20100SG 3 2 1 PIN 1 PIN.
Manufacture

Vishay

Datasheet
Download VF20100SG Datasheet


Vishay VF20100SG

VF20100SG; 2 PIN 3 K PRIMARY CHARACTERISTICS I F(AV) 20 A VRRM 100 V IFSM 150 A VF at IF = 20 A 0.75 V TJ max. Packag e 150 °C TO-220AB, ITO-220AB, TO-263A B, TO-262AA Diode variations Single d ie FEATURES • Trench MOS Schottky te chnology • Low forward voltage drop, low power losses • High efficiency op eration • Low thermal resistance • Meets MSL level 1, per J-STD-.


Vishay VF20100SG

020, LF maximum peak of 245 °C (for TO- 263AB package) • Solder bath temperat ure 275 °C maximum, 10 s, per JESD 22- B106 (for TO-220AB, ITO-220AB, and TO-2 62AA package) • Material categorizati on: For definitions of compliance pleas e see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, f reewheeling diodes, OR-i.


Vishay VF20100SG

ng diode, DC/DC converters and reverse b attery protection. MECHANICAL DATA Case : TO-220AB, ITO-220AB, TO-263AB, and TO -262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - R oHS-compliant, commercial grade Termina ls: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 su ffix meets JESD 201 class 1A whisker te st Polarity: As marked.

Part

VF20100SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


V20100SG, VF20100SG, VB20100SG, VI20100S G www.vishay.com Vishay General Semic onductor High Voltage Trench MOS Barri er Schottky Rectifier Ultra Low VF = 0. 50 V at IF = 5 A TO-220AB TMBS ® IT O-220AB V20100SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20100 SG PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100SG NC K A HEATSINK VI20100SG 3 2 1 PIN 1 PIN.
Manufacture

Vishay

Datasheet
Download VF20100SG Datasheet




 VF20100SG
V20100SG, VF20100SG, VB20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20100SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
123
VF20100SG
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20100SG
NC K
A HEATSINK
3
2
VI20100SG 1
PIN 1
PIN 2
PIN 3
K
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
20 A
100 V
150 A
0.75 V
150 °C
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Single
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100SG
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF20100SG VB20100SG
100
20
150
150
1.0
10 000
1500
-40 to +150
VI20100SG
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 18-Jun-2018
1 Document Number: 88966
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VF20100SG
V20100SG, VF20100SG, VB20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
Reverse current
IR = 10 mA
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
105 (minimum)
0.55
0.66
0.91
0.50
0.59
0.75
15
6
60
13
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
1.07
-
-
0.82
-
-
350
25
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100SG VF20100SG
Typical thermal resistance
RJC
2.2
4.0
VB20100SG
2.2
VI20100SG
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100SG-E3/4W
1.88
ITO-220AB
VF20100SG-E3/4W
1.74
TO-263AB
VB20100SG-E3/4W
1.37
TO-263AB
VB20100SG-E3/8W
1.37
TO-262AA
VI20100SG-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
V20100SG
VI20100SG
VB20100SG
16
VF20100SG
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
25
D = 0.5 D = 0.8
D = 0.3
20 D = 0.2
D = 0.1
D = 1.0
15
10
T
5
D = tp/T
tp
0
0 4 8 12 16 20 24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 18-Jun-2018
2 Document Number: 88966
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VF20100SG
V20100SG, VF20100SG, VB20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
Junction to Case
1
0.1
0.01
0.001
0.01
V(B,I)20100SG
0.1 1
10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
10
Junction to Case
1
0.01
VF20100SG
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
Revision: 18-Jun-2018
3 Document Number: 88966
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






Recommended third-party VF20100SG Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)