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Schottky Rectifier. VB20100SG Datasheet

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Schottky Rectifier. VB20100SG Datasheet






VB20100SG Rectifier. Datasheet pdf. Equivalent




VB20100SG Rectifier. Datasheet pdf. Equivalent





Part

VB20100SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VB20100SG Datasheet


Vishay VB20100SG

VB20100SG; V20100SG, VF20100SG, VB20100SG, VI20100S G www.vishay.com Vishay General Semic onductor High Voltage Trench MOS Barri er Schottky Rectifier Ultra Low VF = 0. 50 V at IF = 5 A TO-220AB TMBS ® IT O-220AB V20100SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20100 SG PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100SG NC K A HEATSINK VI20100SG 3 2 1 PIN 1 PIN.


Vishay VB20100SG

2 PIN 3 K PRIMARY CHARACTERISTICS I F(AV) 20 A VRRM 100 V IFSM 150 A VF at IF = 20 A 0.75 V TJ max. Packag e 150 °C TO-220AB, ITO-220AB, TO-263A B, TO-262AA Diode variations Single d ie FEATURES • Trench MOS Schottky te chnology • Low forward voltage drop, low power losses • High efficiency op eration • Low thermal resistance • Meets MSL level 1, per J-STD-.


Vishay VB20100SG

020, LF maximum peak of 245 °C (for TO- 263AB package) • Solder bath temperat ure 275 °C maximum, 10 s, per JESD 22- B106 (for TO-220AB, ITO-220AB, and TO-2 62AA package) • Material categorizati on: For definitions of compliance pleas e see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, f reewheeling diodes, OR-i.



Part

VB20100SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VB20100SG Datasheet




 VB20100SG
V20100SG, VF20100SG, VB20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20100SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
123
VF20100SG
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20100SG
NC K
A HEATSINK
3
2
VI20100SG 1
PIN 1
PIN 2
PIN 3
K
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
20 A
100 V
150 A
0.75 V
150 °C
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Single
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100SG
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF20100SG VB20100SG
100
20
150
150
1.0
10 000
1500
-40 to +150
VI20100SG
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 18-Jun-2018
1 Document Number: 88966
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 VB20100SG
V20100SG, VF20100SG, VB20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
Reverse current
IR = 10 mA
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
105 (minimum)
0.55
0.66
0.91
0.50
0.59
0.75
15
6
60
13
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
1.07
-
-
0.82
-
-
350
25
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100SG VF20100SG
Typical thermal resistance
RJC
2.2
4.0
VB20100SG
2.2
VI20100SG
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100SG-E3/4W
1.88
ITO-220AB
VF20100SG-E3/4W
1.74
TO-263AB
VB20100SG-E3/4W
1.37
TO-263AB
VB20100SG-E3/8W
1.37
TO-262AA
VI20100SG-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
V20100SG
VI20100SG
VB20100SG
16
VF20100SG
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
25
D = 0.5 D = 0.8
D = 0.3
20 D = 0.2
D = 0.1
D = 1.0
15
10
T
5
D = tp/T
tp
0
0 4 8 12 16 20 24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 18-Jun-2018
2 Document Number: 88966
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 VB20100SG
V20100SG, VF20100SG, VB20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
Junction to Case
1
0.1
0.01
0.001
0.01
V(B,I)20100SG
0.1 1
10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
10
Junction to Case
1
0.01
VF20100SG
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
Revision: 18-Jun-2018
3 Document Number: 88966
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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