High-Voltage Trench MOS Barrier Schottky Rectifier
Description
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New Product
V20120SG, VF20120SG, VB20120SG & VI20120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J...
