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Schottky Rectifier. VI20120SG Datasheet

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Schottky Rectifier. VI20120SG Datasheet






VI20120SG Rectifier. Datasheet pdf. Equivalent




VI20120SG Rectifier. Datasheet pdf. Equivalent





Part

VI20120SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V20120SG, VI20120SG Vish ay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier U ltra Low VF = 0.54 V at IF = 5 A TO-22 0AB TMBS ® TO-262AA K 3 2 1 V2012 0SG PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20120SG PIN 1 PIN 2 PIN 3 K FEAT URES • Trench MOS Schottky technology • Low forward voltage drop, low powe r losses • High efficie.
Manufacture

Vishay

Datasheet
Download VI20120SG Datasheet


Vishay VI20120SG

VI20120SG; ncy operation • Solder bath temperatur e 275 °C max. 10 s, per JESD 22-B106 Material categorization: for definit ions of compliance please see www.visha y.com/doc?99912 TYPICAL APPLICATIONS Fo r use in high frequency DC/DC converter s, switching power supplies, freewheeli ng diodes, OR-ing diode, and reverse ba ttery protection. PRIMARY CHARACTERIST ICS IF(AV) 20 A VRRM.


Vishay VI20120SG

120 V IFSM VF at IF = 20 A 150 A 0.7 8 V TJ max. 150 °C Package TO-220A B, TO-262AA Diode variation Single M ECHANICAL DATA Case: TO-220AB and TO-26 2AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halo gen-free, RoHS-compliant, and commercia l grade Terminals: matte tin plated lea ds, solderable per J-STD-002 and JESD 2 2-B102 M3 suffix mee.


Vishay VI20120SG

ts JESD 201 class 1A whisker test Polari ty: as marked Mounting Torque: 10 in-lb s maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak revers e voltage Maximum average forward recti fied current (fig. 1) Peak forward surg e current 8.3 ms single half sine-wave superimposed on rated load VRRM IF(AV) IFSM Voltage rate o.

Part

VI20120SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V20120SG, VI20120SG Vish ay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier U ltra Low VF = 0.54 V at IF = 5 A TO-22 0AB TMBS ® TO-262AA K 3 2 1 V2012 0SG PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20120SG PIN 1 PIN 2 PIN 3 K FEAT URES • Trench MOS Schottky technology • Low forward voltage drop, low powe r losses • High efficie.
Manufacture

Vishay

Datasheet
Download VI20120SG Datasheet




 VI20120SG
www.vishay.com
V20120SG, VI20120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
3
2
1
V20120SG
PIN 1
PIN 2
PIN 3
CASE
3
2
1
VI20120SG
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
120 V
IFSM
VF at IF = 20 A
150 A
0.78 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Single
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V20120SG
VI20120SG
120
20
150
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 09-Nov-17
1
Document Number: 89244
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VI20120SG
www.vishay.com
V20120SG, VI20120SG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
IF = 5 A
0.62
IF = 10 A
TA = 25 °C
0.81
Instantaneous forward voltage
IF = 20 A
IF = 5 A
IF = 10 A
TA = 125 °C
VF (1)
1.20
0.54
0.65
IF = 20 A
0.78
Reverse current
TA = 25 °C
10
VR = 90 V
TA = 125 °C
IR (2)
7
TA = 25 °C
-
VR = 120 V
TA = 125 °C
12
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
1.33
-
-
0.88
-
-
250
25
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20120SG
VI20120SG
Typical thermal resistance
RJC
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20120SG-M3/4W
1.88
TO-262AA
VI20120SG-M3/4W
1.45
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Revision: 09-Nov-17
2
Document Number: 89244
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VI20120SG
www.vishay.com
V20120SG, VI20120SG
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
35
D = 0.5
30
D = 0.3
25
D = 0.2
20 D = 0.1
15
10
D = 0.8
D = 1.0
T
5
D = tp/T
tp
0
0
4
8
12
16
20
24
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
10
Junction to Case
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
Revision: 09-Nov-17
3
Document Number: 89244
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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