DatasheetsPDF.com

Schottky Rectifier. VF20150C Datasheet

DatasheetsPDF.com

Schottky Rectifier. VF20150C Datasheet






VF20150C Rectifier. Datasheet pdf. Equivalent




VF20150C Rectifier. Datasheet pdf. Equivalent





Part

VF20150C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VF20150C Datasheet


Vishay VF20150C

VF20150C; www.vishay.com V20150C, VF20150C, VB201 50C, VI20150C Vishay General Semiconduc tor Dual High-Voltage Trench MOS Barri er Schottky Rectifier Ultra Low VF = 0. 59 V at IF = 5 A TO-220AB TMBS ® IT O-220AB V20150C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20150C PIN 1 PIN 2 PIN 3 TO-262AA K FEATUR ES • Trench MOS Schottky technology Low forward voltage .


Vishay VF20150C

drop, low power losses • High efficien cy operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a nd TO-262AA package) • Material categ orization: For definitions of complianc e please see www.vishay.com/doc?99912 T YPICAL APPLICATIONS For use .


Vishay VF20150C

in high frequency converters, switching power supplies, freewheeling diodes, OR -ing diode, DC/DC converters and revers e battery protection. 2 1 VB20150C P IN 1 K PIN 2 HEATSINK 3 2 1 VI2015 0C PIN 1 PIN 2 PIN 3 K PRIMARY CHA RACTERISTICS IF(AV) 2 x 10 A VRRM 1 50 V IFSM 120 A VF at IF = 10 A 0.6 9 V TJ max. 150 °C MECHANICAL DATA Case: TO-220AB, ITO.



Part

VF20150C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VF20150C Datasheet




 VF20150C
www.vishay.com
V20150C, VF20150C, VB20150C, VI20150C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20150C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF20150C
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB
and TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VB20150C
PIN 1
K
PIN 2
HEATSINK
3
2
1
VI20150C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
150 V
IFSM
120 A
VF at IF = 10 A
0.69 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20150C
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current
(fig. 1)
per device
per diode
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
IFSM
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF20150C VB20150C
150
20
10
120
70
0.5
10 000
1500
- 55 to + 150
VI20150C
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 20-Nov-12
1 Document Number: 89046
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 VF20150C
www.vishay.com
V20150C, VF20150C, VB20150C, VI20150C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
per diode (1)
Reverse current per diode (2)
IR = 1.0 mA
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
VR = 100 V
VR = 150 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR 150 (minimum)
0.79
1.05
VF 0.59
0.69
1.3
1.2
IR -
3
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
1.20
-
0.75
-
-
150
15
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150C
VF20150C
Typical thermal resistance per diode
RJC
2.8
5.0
VB20150C
2.8
VI20150C
2.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20150C-E3/4W
1.88
ITO-220AB
VF20150C-E3/4W
1.75
TO-263AB
VB20150C-E3/4W
1.39
TO-263AB
VB20150C-E3/8W
1.39
TO-262AA
VI20150C-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15 VF20150C
V(B,I)20150C
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
D = 0.8
D = 0.5
8 D = 0.3
D = 0.2
6
D = 0.1
4
D = 1.0
T
2
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 20-Nov-12
2 Document Number: 89046
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 VF20150C
www.vishay.com
V20150C, VF20150C, VB20150C, VI20150C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10 TA = 150 °C
1 TA = 125 °C
0.1
0.01
0.001
TA = 100 °C
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
Junction to Case
1
0.01
V(B,I)20150C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.01
VF20150C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance Per Diode
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
Revision: 20-Nov-12
3 Document Number: 89046
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Recommended third-party VF20150C Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)