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V20150C

Vishay

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V20150C, VF20150C, VB20150C, VI20150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier...


Vishay

V20150C

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Description
www.vishay.com V20150C, VF20150C, VB20150C, VI20150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20150C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20150C PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VB20150C PIN 1 K PIN 2 HEATSINK 3 2 1 VI20150C PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 150 V IFSM 120 A VF at IF = 10 A 0.69 V TJ max. 150 °C MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum      MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYM...




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