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Schottky Rectifier. VF20150S Datasheet

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Schottky Rectifier. VF20150S Datasheet







VF20150S Rectifier. Datasheet pdf. Equivalent




VF20150S Rectifier. Datasheet pdf. Equivalent





Part

VF20150S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VF20150S Datasheet


Vishay VF20150S

VF20150S; www.vishay.com VF20150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TMBS ® ITO-220A B 123 VF20150S PIN 1 PIN 2 PIN 3 F EATURES • Trench MOS Schottky technol ogy • Low forward voltage drop, low p ower losses • High efficiency operati on • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 .


Vishay VF20150S

• Material categorization: For definit ions of compliance please see www.visha y.com/doc?99912 TYPICAL APPLICATIONS Fo r use in high frequency DC/DC converter s, switching power supplies, freewheeli ng diodes, OR-ing diode, and reverse ba ttery protection. PRIMARY CHARACTERIST ICS IF(AV) 20 A VRRM IFSM VF at IF = 20 A 150 V 160 A 0.75 V TJ max. 150 °C Package ITO-22.


Vishay VF20150S

0AB Diode variation Single die MECHAN ICAL DATA Case: ITO-220AB Molding co mpound meets UL 94 V-0 flammability rat ing Base P/N-M3 - halogen-free, RoHS-co mpliant, and commercial grade Terminals : Matte tin plated leads, solderable pe r J-STD-002 and JESD 22-B102 M3 suff ix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 1 0 in-lbs maximum MAXI.



Part

VF20150S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VF20150S Datasheet




 VF20150S
www.vishay.com
VF20150S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TMBS ®
ITO-220AB
123
VF20150S
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
IFSM
VF at IF = 20 A
150 V
160 A
0.75 V
TJ max.
150 °C
Package
ITO-220AB
Diode variation
Single die
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF20150S
150
20
160
10 000
1500
-55 to +150
UNIT
V
A
A
V/μs
V
°C
Revision: 28-Oct-13
1 Document Number: 89268
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 VF20150S
www.vishay.com
VF20150S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
VR = 100 V
VR = 150 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.69
0.84
1.15
0.55
0.64
0.75
2.0
2.5
-
5
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RJC
VF20150S
4.0
MAX.
-
-
1.43
-
-
0.82
-
-
250
25
UNIT
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VF20150S-M3/4W
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
Revision: 28-Oct-13
2 Document Number: 89268
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 VF20150S
www.vishay.com
VF20150S
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100
10 TA = 150 °C
1 TA = 125 °C
0.1 TA = 100 °C
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01
0.001
TA = 25 °C
100
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
45° REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
PIN
123
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Revision: 28-Oct-13
3 Document Number: 89268
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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