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Schottky Rectifier. V20150S Datasheet

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Schottky Rectifier. V20150S Datasheet






V20150S Rectifier. Datasheet pdf. Equivalent




V20150S Rectifier. Datasheet pdf. Equivalent





Part

V20150S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V20150S, VI20150S Vishay General Semiconductor High-Voltage Tr ench MOS Barrier Schottky Rectifier Ult ra Low VF = 0.55 V at IF = 5 A TO-220A B TMBS ® TO-262AA K 3 2 1 V20150S PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20 150S PIN 1 PIN 2 PIN 3 K FEATURES Trench MOS Schottky technology • L ow forward voltage drop, low power loss es • High efficiency op.
Manufacture

Vishay

Datasheet
Download V20150S Datasheet


Vishay V20150S

V20150S; eration • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Mat erial categorization: for definitions o f compliance please see www.vishay.com/ doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, swi tching power supplies, freewheeling dio des, OR-ing diode, and reserve battery protection. PRIMARY CHARACTERISTICS I F(AV) VRRM IFSM 20 A 1.


Vishay V20150S

50 V 160 A VF at IF = 20 A 0.75 V TJ max. Package 150 °C TO-220AB, TO-262A A Diode variations Single MECHANICAL DATA Case: TO-220AB and TO-262AA Mo lding compound meets UL 94 V-0 flammabi lity rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade T erminals: matte tin plated leads, solde rable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 2.


Vishay V20150S

01 class 1A whisker test Polarity: as ma rked Mounting Torque: 10 in-lbs maximum  MAXIMUM RATINGS (TA = 25 °C unles s otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM Maximum average forward rectifi ed current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave su perimposed on rated load IF(AV) IFSM Voltage rate of chang.

Part

V20150S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V20150S, VI20150S Vishay General Semiconductor High-Voltage Tr ench MOS Barrier Schottky Rectifier Ult ra Low VF = 0.55 V at IF = 5 A TO-220A B TMBS ® TO-262AA K 3 2 1 V20150S PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20 150S PIN 1 PIN 2 PIN 3 K FEATURES Trench MOS Schottky technology • L ow forward voltage drop, low power loss es • High efficiency op.
Manufacture

Vishay

Datasheet
Download V20150S Datasheet




 V20150S
www.vishay.com
V20150S, VI20150S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
3
2
1
V20150S
PIN 1
PIN 2
PIN 3
CASE
3
2
1
VI20150S
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reserve battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
20 A
150 V
160 A
VF at IF = 20 A
0.75 V
TJ max.
Package
150 °C
TO-220AB, TO-262AA
Diode variations
Single
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IF(AV)
IFSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
V20150S
VI20150S
150
20
160
10 000
-55 to +150
UNIT
V
A
A
V/μs
°C
Revision: 09-Nov-17
1
Document Number: 89247
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 V20150S
www.vishay.com
V20150S, VI20150S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
IF = 5 A
0.69
IF = 10 A
TA = 25 °C
0.84
Instantaneous forward voltage
IF = 20 A
IF = 5 A
IF = 10 A
TA = 125 °C
VF (1)
1.15
0.55
0.64
IF = 20 A
0.75
Reverse current
TA = 25 °C
2
VR = 100 V
TA = 125 °C
IR (2)
2.5
TA = 25 °C
-
VR = 150 V
TA = 125 °C
5
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
1.43
-
-
0.82
-
-
250
25
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150S
VI20150S
Typical thermal resistance
RJC
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20150S-M3/4W
1.88
TO-262AA
VI20150S-M3/4W
1.45
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Revision: 09-Nov-17
2
Document Number: 89247
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 V20150S
www.vishay.com
V20150S, VI20150S
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
10
TA = 150 °C
1
TA = 125 °C
0.1
TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
10
Junction to Case
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
Revision: 09-Nov-17
3
Document Number: 89247
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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