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Schottky Rectifier. VF30100C Datasheet

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Schottky Rectifier. VF30100C Datasheet






VF30100C Rectifier. Datasheet pdf. Equivalent




VF30100C Rectifier. Datasheet pdf. Equivalent





Part

VF30100C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


New Product V30100C, VF30100C, VB30100C & VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB TMBS ® ITO- 220AB V30100C 3 2 1 PIN 1 PIN 2 PI N 3 CASE TO-263AB K VF30100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 V B30100C PIN 1 K PIN 2 HEATSINK VI3 0100C PIN 1 3 2 1 .
Manufacture

Vishay

Datasheet
Download VF30100C Datasheet


Vishay VF30100C

VF30100C; PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ m ax. 2 x 15 A 100 V 160 A 0.63 V 150 ° C FEATURES • Trench MOS Schottky tec hnology • Low forward voltage drop, l ow power losses • High efficiency ope ration • Low thermal resistance • M eets MSL level 1, per J-STD-020, LF max imum peak of 245 °C (for TO-263AB pack age) • Solder bath temperature.


Vishay VF30100C

275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directiv e 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switchin g power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and r everse battery protection. MECHANICAL D ATA Case: TO-220AB, I.


Vishay VF30100C

TO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability r ating Base P/N-E3 - RoHS compliant, com mercial grade Terminals: Matte tin plat ed leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 c lass 1A whisker test Polarity: As marke d Mounting Torque: 10 in-lbs maximum M AXIMUM RATINGS (TA = 25 °C unless othe rwise noted) PARAM.

Part

VF30100C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


New Product V30100C, VF30100C, VB30100C & VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB TMBS ® ITO- 220AB V30100C 3 2 1 PIN 1 PIN 2 PI N 3 CASE TO-263AB K VF30100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 V B30100C PIN 1 K PIN 2 HEATSINK VI3 0100C PIN 1 3 2 1 .
Manufacture

Vishay

Datasheet
Download VF30100C Datasheet




 VF30100C
New Product
V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30100C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30100C
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB30100C
PIN 1
K
PIN 2
HEATSINK
VI30100C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
2 x 15 A
100 V
160 A
0.63 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30100C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF30100C VB30100C
100
30
15
160
210
1.0
10 000
1500
- 40 to + 150
VI30100C
UNIT
V
A
A
mJ
A
V/µs
V
°C
Document Number: 89010
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1




 VF30100C
New Product
V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR 100 (minimum)
Instantaneous forward voltage
per diode (1)
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
TA = 25 °C
TA = 125 °C
VF
0.516
0.576
0.734
0.455
0.522
0.627
Reverse current per diode (2)
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
7.2
8.0
65
20
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
0.80
-
-
0.68
-
-
500
35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30100C
VF30100C VB30100C
Typical thermal resistance per diode
RθJC
2.5
5.5
2.5
VI30100C
2.5
UNIT
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V30100C-E3/4W
1.88
ITO-220AB
VF30100C-E3/4W
1.75
TO-263AB
VB30100C-E3/4W
1.39
TO-263AB
VB30100C-E3/8W
1.39
TO-262AA
VI30100C-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
VF30100C
25
VB(I)30100C
20
V30100C
15
10
5
0
0 25 50 75 100 125 150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
14
D = 0.3 D = 0.5 D = 0.8
12 D = 0.2
10 D = 0.1
D = 1.0
8
6
T
4
2
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89010
Revision: 24-Jun-09




 VF30100C
New Product
V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
10
Junction to Case
1
0.1
0.01
0.001
0.01
V(B,J)30100C
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.01
VF30100C
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 89010
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3






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