New Product
V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Sc...
New Product
V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30100C
123
PIN 1
PIN 2
PIN 3
TO-262AA K
2 1
VB30100C
PIN 1
K
PIN 2
HEATSINK
VI30100C
PIN 1
3 2 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
2 x 15 A 100 V 160 A 0.63 V 150 °C
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power
losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30100C...