DatasheetsPDF.com

Schottky Rectifier. VI30100C Datasheet

DatasheetsPDF.com

Schottky Rectifier. VI30100C Datasheet






VI30100C Rectifier. Datasheet pdf. Equivalent




VI30100C Rectifier. Datasheet pdf. Equivalent





Part

VI30100C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V30100C, VI30100C Vishay General Semiconductor Dual High Volta ge Trench MOS Barrier Schottky Rectifie r Ultra Low VF = 0.455 V at IF = 5 A T O-220AB TMBS ® TO-262AA K V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI301 00C 3 2 1 PIN 1 PIN 2 PIN 3 K FEA TURES • Trench MOS Schottky technolog y • Low forward voltage drop, low pow er losses • High effici.
Manufacture

Vishay

Datasheet
Download VI30100C Datasheet


Vishay VI30100C

VI30100C; ency operation • Low thermal resistanc e • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorizati on: for definitions of compliance pleas e see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power suppl ies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMA RY CHARACTERISTICS IF(AV.


Vishay VI30100C

) 2 x 15 A VRRM IFSM 100 V 160 A VF at IF = 15 A 0.63 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode var iation Common cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS -compliant, and commercial grade Termin als: matte tin plated leads, solderable per J-STD-002 and JE.


Vishay VI30100C

SD 22-B102 M3 suffix meets JESD 201 c lass 1A whisker test Polarity: as marke d Mounting Torque: 10 in-lbs max. M AXIMUM RATINGS (TA = 25 °C unless othe rwise noted) PARAMETER SYMBOL Max. r epetitive peak reverse voltage Max. ave rage forward rectified current (fig. 1) per device per diode VRRM IF(AV) Pe ak forward surge current 8.3 ms single half sine-wave superim.

Part

VI30100C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V30100C, VI30100C Vishay General Semiconductor Dual High Volta ge Trench MOS Barrier Schottky Rectifie r Ultra Low VF = 0.455 V at IF = 5 A T O-220AB TMBS ® TO-262AA K V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI301 00C 3 2 1 PIN 1 PIN 2 PIN 3 K FEA TURES • Trench MOS Schottky technolog y • Low forward voltage drop, low pow er losses • High effici.
Manufacture

Vishay

Datasheet
Download VI30100C Datasheet




 VI30100C
www.vishay.com
V30100C, VI30100C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
V30100C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VI30100C
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
IFSM
100 V
160 A
VF at IF = 15 A
0.63 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V30100C
VI30100C
100
30
15
160
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 09-Nov-17
1 Document Number: 89158
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VI30100C
www.vishay.com
V30100C, VI30100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
IF = 5 A
0.516
IF = 7.5 A
TA = 25 °C
0.576
Instantaneous forward voltage
per diode
IF = 15 A
IF = 5 A
IF = 7.5 A
TA = 125 °C
VF (1)
0.734
0.455
0.522
IF = 15 A
0.627
Reverse current per diode
VR = 70 V
VR = 100 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
7.2
8.0
65
20
MAX.
-
-
0.80
-
-
0.68
-
-
500
35
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RJC
V30100C
VI30100C
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V30100C-M3/4W
1.88
TO-262AA
VI30100C-M3/4W
1.45
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Revision: 09-Nov-17
2 Document Number: 89158
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VI30100C
www.vishay.com
V30100C, VI30100C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
25
20
15
10
5
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
14
D = 0.5 D = 0.8
D = 0.3
12 D = 0.2
10 D = 0.1
D = 1.0
8
6
T
4
2
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
TA = 150 °C
TA = 125 °C
10
TA = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
Junction to Case
1
0.1
0.01
0.001
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 09-Nov-17
3 Document Number: 89158
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






Recommended third-party VI30100C Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)