www.vishay.com
V30100C, VI30100C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
...
www.vishay.com
V30100C, VI30100C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA K
V30100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VI30100C
3 2 1
PIN 1
PIN 2
PIN 3
K
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM IFSM
100 V 160 A
VF at IF = 15 A
0.63 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load ...