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Schottky Rectifier. V30100S Datasheet

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Schottky Rectifier. V30100S Datasheet






V30100S Rectifier. Datasheet pdf. Equivalent




V30100S Rectifier. Datasheet pdf. Equivalent





Part

V30100S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V30100S, VI30100S Vishay General Semiconductor High-Voltage Tr ench MOS Barrier Schottky Rectifier Ult ra Low VF = 0.39 V at IF = 5 A TO-220A B TMBS ® TO-262AA K V30100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI30 100S PIN 1 PIN 2 PIN 3 K PRIMARY C HARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 30 A 100 V 2 50 A 0.69 V 150 °C .
Manufacture

Vishay

Datasheet
Download V30100S Datasheet


Vishay V30100S

V30100S; TO-220AB, TO-262AA Diode variations Si ngle die FEATURES • Trench MOS Schot tky technology • Low forward voltage drop, low power losses • High efficie ncy operation • Solder dip 275 °C ma x. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please se e www.vishay.com/doc?99912 TYPICAL APPL ICATIONS For use in high freque.


Vishay V30100S

ncy DC/DC converters, switching power su pplies, freewheeling diodes, OR-ing dio de, and reverse battery protection. MEC HANICAL DATA Case: TO-220AB and TO-262A A Molding compound meets UL 94 V-0 f lammability rating Base P/N-M3 - haloge n-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, Ro HS-compliant, and AEC-Q101 qualified Te rminals: Matte tin pla.


Vishay V30100S

ted leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 20 1 class 1A whisker test, HM3 suffix mee ts JESD 201 class 2 whisker test Polari ty: As marked Mounting Torque: 10 in-lb s maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak revers e voltage Maximum average forward recti fied current (fig. 1) P.

Part

V30100S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V30100S, VI30100S Vishay General Semiconductor High-Voltage Tr ench MOS Barrier Schottky Rectifier Ult ra Low VF = 0.39 V at IF = 5 A TO-220A B TMBS ® TO-262AA K V30100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI30 100S PIN 1 PIN 2 PIN 3 K PRIMARY C HARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 30 A 100 V 2 50 A 0.69 V 150 °C .
Manufacture

Vishay

Datasheet
Download V30100S Datasheet




 V30100S
www.vishay.com
V30100S, VI30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
V30100S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
3
2
1
VI30100S
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
30 A
100 V
250 A
VF at IF = 30 A
0.69 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variations
Single
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V30100S
VI30100S
100
30
250
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 09-Nov-17
1 Document Number: 89175
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 V30100S
www.vishay.com
V30100S, VI30100S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
IF = 5 A
IF = 10 A
IF = 30 A
IF = 5 A
IF = 10 A
IF = 30 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.47
0.55
0.80
0.39
0.49
0.69
27
11
70
23
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
0.91
-
-
0.78
-
-
1000
45
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30100S
VI30100S
Typical thermal resistance
RJC
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V30100S-M3/4W
1.88
TO-262AA
VI30100S-M3/4W
1.45
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Revision: 09-Nov-17
2 Document Number: 89175
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 V30100S
www.vishay.com
V30100S, VI30100S
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
25
20
15
10
5 Mounted on Specific Heatsink
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
1000
100
TA = 150 °C
10 TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
32
D = 0.5 D = 0.8
28 D = 0.3
24 D = 0.2
D = 0.1
20
D = 1.0
16
12
T
8
4
D = tp/T tp
0
0 4 8 12 16 20 24 28 32 36
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
TA = 150 °C
10
TA = 125 °C
TA = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (V)
1.2
Fig. 3 - Typical Instantaneous Forward Characteristics
10
Junction to Case
1
0.1
0.01
0.001
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Revision: 09-Nov-17
3 Document Number: 89175
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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