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Schottky Rectifier. VB30100S Datasheet

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Schottky Rectifier. VB30100S Datasheet






VB30100S Rectifier. Datasheet pdf. Equivalent




VB30100S Rectifier. Datasheet pdf. Equivalent





Part

VB30100S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VB30100S Datasheet


Vishay VB30100S

VB30100S; www.DataSheet.co.kr New Product V30100 S, VF30100S, VB30100S & VI30100S Vishay General Semiconductor High-Voltage Tr ench MOS Barrier Schottky Rectifier Ult ra Low VF = 0.39 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forwar d voltage drop, low power losses • Hi gh efficiency operation • Low thermal resistance 2 V30100S PIN .


Vishay VB30100S

1 PIN 2 CASE 3 1 VF30100S PIN 1 PIN 2 2 3 1 • Meets MSL level 1, per J-S TD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 C, 40 s (for TO-220AB, ITO-220AB, and TO-262AA package) • Component in acco rdance to RoHS 2002/95/EC and WEEE 2002 /96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching pow er supplies, freewheeling .


Vishay VB30100S

diodes, OR-ing diode, dc-to-dc converter s and reverse battery protection. MECHA NICAL DATA Case: TO-220AB, ITO-220AB, T O-262AA PIN 3 PIN 3 TO-263AB K K TO -262AA A NC 1 VB30100S NC A K HEATSINK 2 3 VI30100S PIN 1 PIN 2 K PIN 3 TO-263AB and PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max . 30 A 100 V 250 A 0.69 V 150 °C Epox y meets UL 94V-0 fl.



Part

VB30100S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VB30100S Datasheet




 VB30100S
www.DataSheet.co.kr
New Product
V30100S, VF30100S, VB30100S & VI30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30100S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30100S
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB30100S
NC K
A HEATSINK
VI30100S
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
30 A
100 V
250 A
0.69 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB,
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30100S
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC
Operating junction and storage temperature range
TJ, TSTG
VF30100S VB30100S
100
30
250
1500
- 40 to + 150
VI30100S
UNIT
V
A
A
V
°C
Document Number: 88941 For technical questions within your region, please contact one of the following:
Revision: 31-Jul-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/





 VB30100S
www.DataSheet.co.kr
New Product
V30100S, VF30100S, VB30100S & VI30100S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 10 mA TA = 25 °C VBR 105 (minimum)
Instantaneous forward voltage (1)
IF = 5 A
IF = 10 A
IF = 30 A
IF = 5 A
IF = 10 A
IF = 30 A
TA = 25 °C
TA = 125 °C
VF
0.47
0.55
0.80
0.39
0.49
0.69
Reverse current (2)
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
27
11
70
23
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30100S
VF30100S
VB30100S
Typical thermal resistance
RθJC
2.0
4.0
2.0
MAX.
-
-
-
0.91
-
-
0.78
-
-
1000
45
VI30100S
2.0
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V30100S-E3/45
1.875
ITO-220AB
VF30100S-E3/45
1.805
TO-263AB
VB30100S-E3/4W
1.380
TO-263AB
VB30100S-E3/8W
1.380
TO-262AA
VI30100S-E3/4W
1.455
PACKAGE CODE
45
45
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
VI(B)30100S
25
VF30100S
20
15
10
5 Mounted on Specific heatsink
0
0 25 50 75 100 125 150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
32
D = 0.5 D = 0.8
28 D = 0.3
D = 0.2
24
D = 0.1
20
D = 1.0
16
12 T
8
4
D = tp/T
tp
0
0 4 8 12 16 20 24 28 32 36
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88941
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 31-Jul-08
Datasheet pdf - http://www.DataSheet4U.net/





 VB30100S
www.DataSheet.co.kr
New Product
V30100S, VF30100S, VB30100S & VI30100S
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (V)
1.2
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
10 000
10
Junction to Case
1
0.1
0.01
0.001
0.01
V(B,I)30100S
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance
10
Junction to Case
1
0.01
VF30100S
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance
1000
100
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
Document Number: 88941 For technical questions within your region, please contact one of the following:
Revision: 31-Jul-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



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