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Schottky Rectifier. VB30100SG Datasheet

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Schottky Rectifier. VB30100SG Datasheet






VB30100SG Rectifier. Datasheet pdf. Equivalent




VB30100SG Rectifier. Datasheet pdf. Equivalent





Part

VB30100SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product V30100 SG, VF30100SG, VB30100SG & VI30100SG Vi shay General Semiconductor High-Voltag e Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A TMB S ® TO-220AB ITO-220AB FEATURES • T rench MOS Schottky technology • Low f orward voltage drop, low power losses High efficiency operation • Low th ermal resistance 2 V30100S.
Manufacture

Vishay

Datasheet
Download VB30100SG Datasheet


Vishay VB30100SG

VB30100SG; G PIN 1 PIN 2 CASE 3 1 VF30100SG PIN 1 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) • Solder di p 260 °C, 40 s (for TO-220AB, ITO-220A B and TO-262AA package) • Component i n accordance to RoHS 2002/95/EC and WEE E 2002/96/EC TYPICAL APPLICATIONS PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB30100SG NC A K HEATSIN.


Vishay VB30100SG

K 2 3 For use in high frequency inver ters, switching power supplies, freewhe eling diodes, OR-ing diode, dc-to-dc co nverters and reverse battery protection . MECHANICAL DATA Case: TO-220AB, ITO-2 20AB, TO-263AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals : Matte tin plated leads, solderable pe r J-STD-002 and JESD22-B102 E3 suffix f or consumer grade,.


Vishay VB30100SG

meets JESD 201 class 1A whisker test Po larity: As marked Mounting Torque: 10 i n-lbs maximum VI30100SG PIN 1 PIN 2 K PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 30 A 100 V 250 A 0.76 V 150 °C MAXIMUM RAT INGS (TA = 25 °C unless otherwise note d) PARAMETER Maximum repetitive peak re verse voltage Maximum average forward r ectified current (Fi.

Part

VB30100SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product V30100 SG, VF30100SG, VB30100SG & VI30100SG Vi shay General Semiconductor High-Voltag e Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A TMB S ® TO-220AB ITO-220AB FEATURES • T rench MOS Schottky technology • Low f orward voltage drop, low power losses High efficiency operation • Low th ermal resistance 2 V30100S.
Manufacture

Vishay

Datasheet
Download VB30100SG Datasheet




 VB30100SG
www.DataSheet.co.kr
New Product
V30100SG, VF30100SG, VB30100SG & VI30100SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.437 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30100SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30100SG
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB30100SG
NC K
A HEATSINK
3
2
1
VI30100SG
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
30 A
100 V
250 A
0.76 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30100SG VF30100SG VB30100SG VI30100SG
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
100
30
250
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
VAC
1500
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
UNIT
V
A
A
V
°C
Document Number: 88996 For technical questions within your region, please contact one of the following:
Revision: 31-Jul-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VB30100SG
www.DataSheet.co.kr
New Product
V30100SG, VF30100SG, VB30100SG & VI30100SG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 10 mA TA = 25 °C
VBR 105 (minimum)
Instantaneous forward voltage (1)
IF = 5 A
IF = 10 A
IF = 30 A
IF = 5 A
IF = 10 A
IF = 30 A
TA = 25 °C
TA = 125 °C
VF
0.50
0.60
0.92
0.44
0.55
0.76
Reverse current (2)
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
8.8
6.5
43
18
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
1.00
-
-
0.83
-
-
350
35
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30100SG VF30100SG VB30100SG
Typical thermal resistance per leg
RθJC
2.0
3.0
2.0
VI30100SG
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V30100SG-E3/4W
1.88
ITO-220AB
VF30100SG-E3/4W
1.74
TO-263AB
VB30100SG-E3/4W
1.37
TO-263AB
VB30100SG-E3/8W
1.37
TO-262AA
VI30100SG-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
V(B,I)30100SG
25 VF30100SG
20
15
10
5
0
0 25 50 75 100 125 150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
32
D = 0.5 D = 0.8
28 D = 0.3
24 D = 0.2
20 D = 0.1
D = 1.0
16
12 T
8
4
D = tp/T
tp
0
0 4 8 12 16 20 24 28 32 36
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88996
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 31-Jul-08
Datasheet pdf - http://www.DataSheet4U.net/




 VB30100SG
www.DataSheet.co.kr
New Product
V30100SG, VF30100SG, VB30100SG & VI30100SG
Vishay General Semiconductor
100
TA = 150 °C
10 TA = 125 °C
TA = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (V)
1.2
Figure 3. Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
10
Junction to Case
1
0.1
0.01
V(I)30100SG
0.001
0.01
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance
10
Junction to Case
1
VF30100SG
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance
100
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
Document Number: 88996 For technical questions within your region, please contact one of the following:
Revision: 31-Jul-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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