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Schottky Rectifier. VF30120C Datasheet

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Schottky Rectifier. VF30120C Datasheet






VF30120C Rectifier. Datasheet pdf. Equivalent




VF30120C Rectifier. Datasheet pdf. Equivalent





Part

VF30120C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product V30120 C, VF30120C, VB30120C & VI30120C Vishay General Semiconductor Dual High-Volta ge Trench MOS Barrier Schottky Rectifie r Ultra Low VF = 0.50 V at IF = 5 A TMB S ® TO-220AB ITO-220AB FEATURES • T rench MOS Schottky technology • Low f orward voltage drop, low power losses High efficiency operation 2 V30120C PIN 1 PIN 3 PIN 2 CASE .
Manufacture

Vishay

Datasheet
Download VF30120C Datasheet


Vishay VF30120C

VF30120C; 3 1 VF30120C PIN 1 PIN 3 PIN 2 2 3 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB p ackage) • Solder dip 260 °C, 40 s (f or TO-220AB, ITO-220AB and TO-262AA pac kage) • Component in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC TYPIC AL APPLICATIONS For use in high frequen cy inverters, switching power supplies, freewheeling diodes, OR-i.


Vishay VF30120C

ng diode, dc-to-dc converters and revers e battery protection. 1 TO-263AB K K TO-262AA 2 1 1 VB30120C PIN 1 PIN 2 K HEATSINK 2 3 VI30120C PIN 1 PIN 3 P IN 2 K MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Ter minals: Matte tin plated leads, soldera ble per J-STD-002 and JESD22-B102 E3 su ffix for consumer .


Vishay VF30120C

grade, meets JESD 201 class 1A whisker t est Polarity: As marked Mounting Torque : 10 in-lbs maximum PRIMARY CHARACTERI STICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 120 V 150 A 0.68 V 150 °C MAXIMUM RATINGS (TA = 25 °C unle ss otherwise noted) PARAMETER Maximum r epetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) per device per d.

Part

VF30120C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product V30120 C, VF30120C, VB30120C & VI30120C Vishay General Semiconductor Dual High-Volta ge Trench MOS Barrier Schottky Rectifie r Ultra Low VF = 0.50 V at IF = 5 A TMB S ® TO-220AB ITO-220AB FEATURES • T rench MOS Schottky technology • Low f orward voltage drop, low power losses High efficiency operation 2 V30120C PIN 1 PIN 3 PIN 2 CASE .
Manufacture

Vishay

Datasheet
Download VF30120C Datasheet




 VF30120C
www.DataSheet.co.kr
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30120C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30120C
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB30120C
PIN 1
K
PIN 2
HEATSINK
VI30120C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
2 x 15 A
120 V
150 A
0.68 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30120C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(Fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
Operating junction and storage temperature range
TJ, TSTG
VF30120C VB30120C
120
30
15
150
1500
- 40 to + 150
VI30120C
UNIT
V
A
A
V
°C
Document Number: 89041 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VF30120C
www.DataSheet.co.kr
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR 120 (minimum)
Instantaneous forward voltage per diode (1)
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
TA = 25 °C
TA = 125 °C
VF
0.56
0.71
0.86
0.50
0.60
0.68
Reverse current per diode (2)
VR = 90 V
VR = 120 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
11
8
-
17
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
0.97
-
-
0.76
-
-
800
50
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120C
VF30120C
Typical thermal resistance per diode
RθJC
2.2
4.5
VB30120C
2.2
VI30120C
2.2
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V30120C-E3/4W
1.89
ITO-220AB
VF30120C-E3/4W
1.75
TO-263AB
VB30120C-E3/4W
1.38
TO-263AB
VB30120C-E3/8W
1.38
TO-262AA
VI30120C-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
40
Resistive or Inductive Load
35
30
V(B,I)30120C
25 VF30120C
20
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
18
16 D = 0.5 D = 0.8
D = 0.3
14
12 D = 0.2
10
D = 0.1
8
6
D = 1.0
T
4
2
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89041
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 19-May-08
Datasheet pdf - http://www.DataSheet4U.net/




 VF30120C
www.DataSheet.co.kr
New Product
V30120C, VF30120C, VB30120C & VI30120C
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.01
V(B,I)30120C
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.1
0.01
VF30120C
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 89041 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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