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Schottky Rectifier. V30120C Datasheet

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Schottky Rectifier. V30120C Datasheet






V30120C Rectifier. Datasheet pdf. Equivalent




V30120C Rectifier. Datasheet pdf. Equivalent





Part

V30120C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download V30120C Datasheet


Vishay V30120C

V30120C; www.vishay.com V30120C, VI30120C Vishay General Semiconductor Dual High Volta ge Trench MOS Barrier Schottky Rectifie r Ultra Low VF = 0.50 V at IF = 5 A TO -220AB TMBS ® TO-262AA K V30120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI3012 0C 3 2 1 PIN 1 PIN 2 PIN 3 K FEAT URES • Trench MOS Schottky technology • Low forward voltage drop, low powe r losses • High efficie.


Vishay V30120C

ncy operation • Solder dip 275 °C max . 10 s, per JESD 22-B106 • Material c ategorization: for definitions of compl iance please see www.vishay.com/doc?999 12 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR -ing diode, and reverse battery protect ion. PRIMARY CHARACTERISTICS IF(AV) V RRM IFSM 2 x 15 A 120 .


Vishay V30120C

V 150 A VF at IF = 15 A 0.68 V TJ max . Package 150 °C TO-220AB, TO-262AA Diode variation Common cathode MECHAN ICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flam mability rating Base P/N-M3 - halogen-f ree, RoHS-com .



Part

V30120C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download V30120C Datasheet




 V30120C
www.vishay.com
V30120C, VI30120C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
V30120C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VI30120C
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
2 x 15 A
120 V
150 A
VF at IF = 15 A
0.68 V
TJ max.
Package
150 °C
TO-220AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
V30120C
VI30120C
120
30
15
150
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 09-Nov-17
1 Document Number: 89160
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 V30120C
www.vishay.com
V30120C, VI30120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
IF = 5 A
0.56
IF = 7.5 A
TA = 25 °C
0.71
Instantaneous forward voltage per diode
IF = 15 A
IF = 5 A
IF = 7.5 A
TA = 125 °C
VF (1)
0.86
0.50
0.60
IF = 15 A
0.68
Reverse current per diode
VR = 90 V
VR = 120 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
11
8
-
17
MAX.
-
-
0.97
-
-
0.76
-
-
800
50
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RJC
V30120C
VI30120C
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V30120C-M3/4W
1.89
TO-262AA
VI30120C-M3/4W
1.45
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Revision: 09-Nov-17
2 Document Number: 89160
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 V30120C
www.vishay.com
V30120C, VI30120C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
40
Resistive or Inductive Load
35
30
25
20
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
18
16 D = 0.5 D = 0.8
D = 0.3
14
D = 0.2
12
10
D = 0.1
8
6
D = 1.0
T
4
2
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
Junction to Case
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 09-Nov-17
3 Document Number: 89160
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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