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V30120S

Vishay

High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V30120S, VI30120S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra...


Vishay

V30120S

File Download Download V30120S Datasheet


Description
www.vishay.com V30120S, VI30120S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30120S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30120S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 30 A 120 V 300 A 0.74 V 150 °C TO-220AB, TO-262AA Diode variation Single MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1) Peak forward surge current 8.3 ms s...




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