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Schottky Rectifier. V30120S Datasheet

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Schottky Rectifier. V30120S Datasheet






V30120S Rectifier. Datasheet pdf. Equivalent




V30120S Rectifier. Datasheet pdf. Equivalent





Part

V30120S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V30120S, VI30120S Vishay General Semiconductor High Voltage Tr ench MOS Barrier Schottky Rectifier Ult ra Low VF = 0.43 V at IF = 5 A TO-220A B TMBS ® TO-262AA K V30120S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30120S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power los ses • High efficiency o.
Manufacture

Vishay

Datasheet
Download V30120S Datasheet


Vishay V30120S

V30120S; peration • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualif ied • Material categorization: For de finitions of compliance please see www. vishay.com/doc?99912 TYPICAL APPLICATIO NS For use in high frequency DC/DC conv erters, switching power supplies, freew heeling diodes, OR-ing diode, and rever se battery protection. PRIMARY CHARACT ERISTICS IF(AV) VRRM IFS.


Vishay V30120S

M VF at IF = 30 A TJ max. Package 30 A 120 V 300 A 0.74 V 150 °C TO-220AB, TO -262AA Diode variation Single MECHAN ICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flam mability rating Base P/N-M3 - halogen-f ree, RoHS-compliant, and commercial gra de Base P/NHM3 - halogen-free, RoHS- compliant, and AEC-Q101 qualified Termi nals: Matte tin plated .


Vishay V30120S

leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 cl ass 1A whisker test, HM3 suffix meets J ESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs ma x. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL M ax. repetitive peak reverse voltage Max . average forward rectified current (fi g. 1) Peak forward su.

Part

V30120S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V30120S, VI30120S Vishay General Semiconductor High Voltage Tr ench MOS Barrier Schottky Rectifier Ult ra Low VF = 0.43 V at IF = 5 A TO-220A B TMBS ® TO-262AA K V30120S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30120S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power los ses • High efficiency o.
Manufacture

Vishay

Datasheet
Download V30120S Datasheet




 V30120S
www.vishay.com
V30120S, VI30120S
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
V30120S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VI30120S
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
Package
30 A
120 V
300 A
0.74 V
150 °C
TO-220AB, TO-262AA
Diode variation
Single
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V30120S
VI30120S
120
30
300
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Revision: 14-Aug-13
1 Document Number: 89152
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 V30120S
www.vishay.com
V30120S, VI30120S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
IF = 5 A
IF = 15 A
IF = 30 A
IF = 5 A
IF = 15 A
IF = 30 A
VR = 90 V
VR = 120 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.50
0.70
0.99
0.43
0.60
0.74
18
12
-
22
MAX.
-
-
1.10
-
-
0.82
-
-
500
35
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RJC
V30120S
VI30120S
1.6
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V30120S-M3/4W
1.88
TO-262AA
TO-220AB
TO-262AA
VI30120S-M3/4W
V30120SHM3/4W (1)
VI30120SHM3/4W (1)
1.45
1.88
1.45
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
Revision: 14-Aug-13
2 Document Number: 89152
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 V30120S
www.vishay.com
V30120S, VI30120S
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
40
Resistive or Inductive Load
35
30
25
20
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
30
D = 0.5
D = 0.8
25
D = 0.3
20
D = 0.2
15
D = 0.1
10
D = 1.0
T
5
D = tp/T tp
0
0 5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Revision: 14-Aug-13
3 Document Number: 89152
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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