Schottky Rectifier. VB40120C Datasheet

VB40120C Rectifier. Datasheet pdf. Equivalent

VB40120C Datasheet
Recommendation VB40120C Datasheet
Part VB40120C
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Feature VB40120C; www.vishay.com V40120C, VF40120C, VB40120C, VI40120C Vishay General Semiconductor Dual High Voltag.
Manufacture Vishay
Datasheet
Download VB40120C Datasheet




Vishay VB40120C
www.vishay.com
V40120C, VF40120C, VB40120C, VI40120C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V40120C
PIN 1
3
2
1
PIN 2
PIN 3
CASE
VF40120C
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D2PAK (TO-263AB)
K
TO-262AA
K
2
1
VB40120C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
VI40120C
PIN 1
3
2
1
PIN 2
PIN 3
K
click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
2 x 20 A
120 V
250 A
0.63 V
150 °C
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB),
and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V40120C VF40120C VB40120C VI40120C UNIT
Maximum repetitive peak reverse voltage
VRRM 120 V
per device
40
Maximum average forward rectified current (fig. 1)
per diode
IF(AV)
20
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
250 A
Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
per diode
EAS
IRRM
180 mJ
0.5 A
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
10 000
-40 to +150
V/μs
°C
Revision: 18-Jun-2018
1 Document Number: 88937
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VB40120C
www.vishay.com
V40120C, VF40120C, VB40120C, VI40120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR
120
(minimum)
Instantaneous forward voltage per diode
Reverse current per diode
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
VR = 90 V
VR = 120 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.50
0.60
0.78
0.43
0.53
0.63
19
10
-
22
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
0.88
-
-
0.71
-
-
500
45
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40120C
VF40120C
Typical thermal resistance per diode
RJC
1.8
4.0
VB40120C
1.8
VI40120C
1.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V40120C-E3/4W
1.88
ITO-220AB
VF40120C-E3/4W
1.76
TO-263AB
VB40120C-E3/4W
1.39
TO-263AB
VB40120C-E3/8W
1.39
TO-262AA
VI40120C-E3/4W
1.46
TO-220AB
V40120C-M3/4W
1.88
ITO-220AB
VF40120C-M3/4W
1.76
TO-263AB
VB40120C-M3/4W
1.39
TO-263AB
VB40120C-M3/8W
1.39
TO-262AA
VI40120C-M3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tube
Tape and reel
Tube
Revision: 18-Jun-2018
2 Document Number: 88937
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VB40120C
www.vishay.com
V40120C, VF40120C, VB40120C, VI40120C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
Resistive or Inductive Load
40
30 VF40120C
V(B,I)40120C
20
10
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 150 °C
10
TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
18
16
14
12
10
8
6
4
2
0
0
D = 0.5 D = 0.8
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
4 8 12 16 20
Average Forward Current (A)
24
Fig. 2 - Forward Power Loss Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
Junction to Case
1
0.1
0.01
V(B,I)40120C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 18-Jun-2018
3 Document Number: 88937
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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