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Schottky Rectifier. VI40120C Datasheet

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Schottky Rectifier. VI40120C Datasheet






VI40120C Rectifier. Datasheet pdf. Equivalent




VI40120C Rectifier. Datasheet pdf. Equivalent





Part

VI40120C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V40120C, VF40120C, VB401 20C, VI40120C Vishay General Semiconduc tor Dual High Voltage Trench MOS Barri er Schottky Rectifier Ultra Low VF = 0. 43 V at IF = 5 A TO-220AB TMBS ® IT O-220AB V40120C PIN 1 3 2 1 PIN 2 PI N 3 CASE VF40120C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottk y technology • Low forward voltage dr op, low power losses • .
Manufacture

Vishay

Datasheet
Download VI40120C Datasheet


Vishay VI40120C

VI40120C; High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum , 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Ma terial categorization: for definitions of compliance please see www.vishay.com /doc?99912 D2PAK (TO-263AB) K TO-262A A K 2 1 VB40120C PIN 1 .


Vishay VI40120C

K PIN 2 HEATSINK DESIGN SUPPORT TOOL S VI40120C PIN 1 3 2 1 PIN 2 PIN 3 K click logo to get started Models Av ailable PRIMARY CHARACTERISTICS IF(AV ) VRRM IFSM VF at IF = 20 A TJ max. Pac kage 2 x 20 A 120 V 250 A 0.63 V 150 C TO-220A .


Vishay VI40120C

.

Part

VI40120C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V40120C, VF40120C, VB401 20C, VI40120C Vishay General Semiconduc tor Dual High Voltage Trench MOS Barri er Schottky Rectifier Ultra Low VF = 0. 43 V at IF = 5 A TO-220AB TMBS ® IT O-220AB V40120C PIN 1 3 2 1 PIN 2 PI N 3 CASE VF40120C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottk y technology • Low forward voltage dr op, low power losses • .
Manufacture

Vishay

Datasheet
Download VI40120C Datasheet




 VI40120C
www.vishay.com
V40120C, VF40120C, VB40120C, VI40120C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V40120C
PIN 1
3
2
1
PIN 2
PIN 3
CASE
VF40120C
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D2PAK (TO-263AB)
K
TO-262AA
K
2
1
VB40120C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
VI40120C
PIN 1
3
2
1
PIN 2
PIN 3
K
click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
2 x 20 A
120 V
250 A
0.63 V
150 °C
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB),
and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V40120C VF40120C VB40120C VI40120C UNIT
Maximum repetitive peak reverse voltage
VRRM 120 V
per device
40
Maximum average forward rectified current (fig. 1)
per diode
IF(AV)
20
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
250 A
Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
per diode
EAS
IRRM
180 mJ
0.5 A
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
10 000
-40 to +150
V/μs
°C
Revision: 18-Jun-2018
1 Document Number: 88937
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VI40120C
www.vishay.com
V40120C, VF40120C, VB40120C, VI40120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR
120
(minimum)
Instantaneous forward voltage per diode
Reverse current per diode
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
VR = 90 V
VR = 120 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.50
0.60
0.78
0.43
0.53
0.63
19
10
-
22
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
0.88
-
-
0.71
-
-
500
45
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40120C
VF40120C
Typical thermal resistance per diode
RJC
1.8
4.0
VB40120C
1.8
VI40120C
1.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V40120C-E3/4W
1.88
ITO-220AB
VF40120C-E3/4W
1.76
TO-263AB
VB40120C-E3/4W
1.39
TO-263AB
VB40120C-E3/8W
1.39
TO-262AA
VI40120C-E3/4W
1.46
TO-220AB
V40120C-M3/4W
1.88
ITO-220AB
VF40120C-M3/4W
1.76
TO-263AB
VB40120C-M3/4W
1.39
TO-263AB
VB40120C-M3/8W
1.39
TO-262AA
VI40120C-M3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tube
Tape and reel
Tube
Revision: 18-Jun-2018
2 Document Number: 88937
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VI40120C
www.vishay.com
V40120C, VF40120C, VB40120C, VI40120C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
Resistive or Inductive Load
40
30 VF40120C
V(B,I)40120C
20
10
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 150 °C
10
TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
18
16
14
12
10
8
6
4
2
0
0
D = 0.5 D = 0.8
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
4 8 12 16 20
Average Forward Current (A)
24
Fig. 2 - Forward Power Loss Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
Junction to Case
1
0.1
0.01
V(B,I)40120C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 18-Jun-2018
3 Document Number: 88937
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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