Schottky Rectifier. VB40150C Datasheet

VB40150C Rectifier. Datasheet pdf. Equivalent

VB40150C Datasheet
Recommendation VB40150C Datasheet
Part VB40150C
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Feature VB40150C; www.DataSheet.co.kr New Product V40150C, VF40150C, VB40150C & VI40150C Vishay General Semiconducto.
Manufacture Vishay
Datasheet
Download VB40150C Datasheet




Vishay VB40150C
www.vishay.com
V40150C, VB40150C, VI40150C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TO-220AB
TMBS ® TO-262AA
K
V40150C
PIN 1
3
2
1
PIN 2
PIN 3
CASE
3
2
1
VI40150C
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for TO-263AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D2PAK (TO-263AB)
K
2
1
VB40150C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
2 x 20 A
150 V
160 A
0.75 V
150 °C
TO-220AB, TO-262AA,
D2PAK (TO-263AB)
Circuit configuration
Common cathode
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, TO-262AA, and D2PAK (TO-263AB),
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
V40150C
VB40150C
150
40
20
160
10 000
-55 to +150
VI40150C
UNIT
V
A
A
V/μs
°C
Revision: 19-Jun-2018
1 Document Number: 89250
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VB40150C
www.vishay.com
V40150C, VB40150C, VI40150C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
TA = 25 °C
Instantaneous forward voltage per diode
IF = 20 A
IF = 5 A
IF = 10 A
TA = 125 °C
VF (1)
IF = 20 A
Reverse current per diode
VR = 100 V
VR = 150 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
TYP.
0.69
0.84
1.15
0.55
0.64
0.75
2
2.5
-
5
MAX.
-
-
1.43
-
-
0.82
-
-
250
25
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40150C
Typical thermal resistance per diode
RJC
VB40150C
1.8
VI40150C
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V40150C-M3/4W
1.89
TO-262AA
VI40150C-M3/4W
1.46
TO-263AB
VB40150C-M3/I
1.39
PACKAGE CODE
4W
4W
I
BASE QUANTITY
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tape and reel
Revision: 19-Jun-2018
2 Document Number: 89250
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VB40150C
www.vishay.com
V40150C, VB40150C, VI40150C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
Resistive or Inductive Load
40
30
20
10
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
10 TA = 150 °C
1 TA = 125 °C
0.1 TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
10
Junction to Case
1
0.1
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
Revision: 19-Jun-2018
3 Document Number: 89250
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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