DatasheetsPDF.com

Schottky Rectifier. VFT1060C Datasheet

DatasheetsPDF.com

Schottky Rectifier. VFT1060C Datasheet







VFT1060C Rectifier. Datasheet pdf. Equivalent




VFT1060C Rectifier. Datasheet pdf. Equivalent





Part

VFT1060C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VFT1060C Datasheet


Vishay VFT1060C

VFT1060C; www.DataSheet.co.kr New Product VFT106 0C Vishay General Semiconductor Dual H igh-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Sold er bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant.


Vishay VFT1060C

to RoHS Directive 2002/95/EC and in acc ordance to WEEE 2002/96/EC • Halogen- free according to IEC 61249-2-21 defini tion 1 VFT1060C PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR -ing diode, and reverse battery protect ion. PRIMARY CHARACTERISTICS IF(AV) VR RM IFSM VF at IF = 5.


Vishay VFT1060C

.0 A TJ max. 2 x 5.0 A 60 V 100 A 0.50 V 150 °C MECHANICAL DATA Case: ITO-220 AB Molding compound meets UL 94 V-0 fla mmability rating Base P/N-M3 - halogen- free, RoHS compliant, and commercial gr ade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M 3 suffix meets JESD 201 class 1A whiske r test Polarity: As marked Mounting Tor que: 10 in-lbs maxi.



Part

VFT1060C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VFT1060C Datasheet




 VFT1060C
www.DataSheet.co.kr
New Product
VFT1060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
TMBS ®
ITO-220AB
123
VFT1060C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
60 V
IFSM
100 A
VF at IF = 5.0 A
0.50 V
TJ max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VFT1060C
60
10
5
100
10 000
1500
- 55 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89253 For technical questions within your region, please contact one of the following:
Revision: 18-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/





 VFT1060C
www.DataSheet.co.kr
New Product
VFT1060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Reverse current per diode
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.49
0.58
0.39
0.50
-
6.6
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
VFT1060C
6.5
5.0
MAX.
-
0.70
-
0.60
700
25
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VFT1060C-M3/4W
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
10
8
6
4
2 Mounted on Specific Heatsink
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
4.0
D = 0.5 D = 0.8
3.5
D = 0.3
3.0
D = 0.2
2.5
2.0 D = 0.1
D = 1.0
1.5 T
1.0
0.5
D = tp/T
tp
0
0123456
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89253
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 18-Nov-10
Datasheet pdf - http://www.DataSheet4U.net/





 VFT1060C
www.DataSheet.co.kr
New Product
VFT1060C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics
10
Junction to Case
1
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100 10 000
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
1000
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
45° REF.
0.600 (15.24)
0.580 (14.73)
PIN
123
ITO-220AB
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Document Number: 89253 For technical questions within your region, please contact one of the following:
Revision: 18-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



Recommended third-party VFT1060C Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)