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New Product
VFT1060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky R...
www.DataSheet.co.kr
New Product
VFT1060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
TMBS ®
ITO-220AB
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition
1 VFT1060C
PIN 1 PIN 3 PIN 2
2
3
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 60 V 100 A 0.50 V 150 °C
MECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt VAC TJ, TSTG SYMBOL VRRM VFT1060C 60 10 A 5 100 10 000 1500 - 55 to + 150 A V/μs V °C UNIT V
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate...