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Schottky Rectifier. VFT1080S Datasheet

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Schottky Rectifier. VFT1080S Datasheet






VFT1080S Rectifier. Datasheet pdf. Equivalent




VFT1080S Rectifier. Datasheet pdf. Equivalent





Part

VFT1080S

Description

Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VFT1080S Datasheet


Vishay VFT1080S

VFT1080S; www.DataSheet.co.kr New Product VFT108 0S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra L ow VF = 0.52 V at IF = 5 A TMBS ® ITO- 220AB FEATURES • Trench MOS Schottky technology • Low forward voltage dro p, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3 • Compliant to RoHS Directiv.


Vishay VFT1080S

e 2002/95/EC and in accordance to WEEE 2 002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VFT1080S PIN 1 PIN 2 2 TYPICAL APPLICATIONS Fo r use in high frequency DC/DC converter s, switching power supplies, freewheeli ng diodes, OR-ing diode, and reverse ba ttery protection. PIN 3 PRIMARY CHARA CTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 80.


Vishay VFT1080S

V 100 A 0.60 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N -M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 c lass 1A whisker test Polarity: As marke d Mounting Torque: 10 in-lbs maximum pe r MAXIMUM RATINGS .



Part

VFT1080S

Description

Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VFT1080S Datasheet




 VFT1080S
www.DataSheet.co.kr
New Product
VFT1080S
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
TMBS ®
ITO-220AB
123
VFT1080S
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
80 V
IFSM
100 A
VF at IF = 10 A
0.60 V
TJ max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VFT1080S
80
10
100
10 000
1500
- 55 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89259 For technical questions within your region, please contact one of the following:
Revision: 18-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/





 VFT1080S
www.DataSheet.co.kr
New Product
VFT1080S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current
VR = 80 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.57
0.67
0.52
0.60
20
10
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RθJC
VFT1080S
5.5
MAX.
-
0.81
-
0.70
600
20
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VFT1080S-M3/4W
1.73
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
8
D = 0.5 D = 0.8
7 D = 0.3
6 D = 0.2
5 D = 0.1
D = 1.0
4
3T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89259
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 18-Nov-10
Datasheet pdf - http://www.DataSheet4U.net/





 VFT1080S
www.DataSheet.co.kr
New Product
VFT1080S
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1 TA = 100 °C
10
Junction to Case
1
0.1
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.01
TA = 25 °C
100
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
45° REF.
0.600 (15.24)
0.580 (14.73)
PIN
123
ITO-220AB
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Document Number: 89259 For technical questions within your region, please contact one of the following:
Revision: 18-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



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