2SC2921

LAPT sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2921 160 160 5 15 4 150(Tc=25°C) 150 –55 to +150 2SC2921 Application : Audio and General Purpose (Ta=25°C) 2SC2921 100max 100max 160min 50min∗ 2.0max 60typ 200typ V MHz pF 20.0min 4.0max Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=160V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VB2 (V) –5 IB1 (mA) 500 IB2 (mA) –500 ton (µs) 0.2typ tstg (µs) 1.5typ tf (µs) 0.35typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 0m 0 60 mA 500 mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 15 (V CE =4V) 15 400 mA 300 mA 75 A Collector Current I C (A) 10 15 0m A 2 Collector Current I C (A) 200m A 10 10 0m A p) as eT 5 1 I C =10A 5A 0 5 (C 5˚C 12 ˚C 0 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 0 –30 25 1 Base-Emittor Voltage V B E (V) ˚C I B =20mA (Ca se Tem 50mA...