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Schottky Rectifier. VFT760 Datasheet

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Schottky Rectifier. VFT760 Datasheet






VFT760 Rectifier. Datasheet pdf. Equivalent




VFT760 Rectifier. Datasheet pdf. Equivalent





Part

VFT760

Description

Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VFT760 Vishay General Semiconductor Trench M OS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® ITO-22 0AC FEATURES • Trench MOS Schottky t echnology • Low forward voltage drop, low power losses • High efficiency o peration • Solder bath temperature 27 5 °C max. 10 s, per JESD 22-B106 • C ompliant to RoHS Directive 200.
Manufacture

Vishay

Datasheet
Download VFT760 Datasheet


Vishay VFT760

VFT760; 2/95/EC and in accordance to WEEE 2002/9 6/EC • Halogen-free according to IEC 61249-2-21 definition 2 1 VFT760 PIN 1 PIN 2 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switc hing power supplies, freewheeling diode s, OR-ing diode, and reverse battery pr otection. PRIMARY CHARACTERISTICS IF(A V) VRRM IFSM VF at IF = 7.5 A TJ max. 7 .5 A 60 V 100 A 0.60.


Vishay VFT760

V 150 °C MECHANICAL DATA Case: ITO-22 0AC Molding compound meets UL 94 V-0 fl ammability rating Base P/N-M3 - halogen -free, RoHS compliant, and commercial g rade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisk er test Polarity: As marked Mounting To rque: 10 in-lbs maximum per MAXIMUM RA TINGS (TA = 25 °C u.


Vishay VFT760

nless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximu m average forward rectified current (fi g. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rate d VR) Isolation voltage from termal to heatsink t = 1 min Operating junction a nd storage temperature range SYMBOL VRR M IF(AV) IFSM dV/d.

Part

VFT760

Description

Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VFT760 Vishay General Semiconductor Trench M OS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® ITO-22 0AC FEATURES • Trench MOS Schottky t echnology • Low forward voltage drop, low power losses • High efficiency o peration • Solder bath temperature 27 5 °C max. 10 s, per JESD 22-B106 • C ompliant to RoHS Directive 200.
Manufacture

Vishay

Datasheet
Download VFT760 Datasheet




 VFT760
www.DataSheet.co.kr
New Product
VFT760
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
ITO-220AC
2
1
VFT760
PIN 1
PIN 2
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
7.5 A
VRRM
60 V
IFSM
100 A
VF at IF = 7.5 A
0.60 V
TJ max.
150 °C
MECHANICAL DATA
Case: ITO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VFT760
60
7.5
100
10 000
1500
- 55 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89252 For technical questions within your region, please contact one of the following:
Revision: 18-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VFT760
www.DataSheet.co.kr
New Product
VFT760
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
IF = 5 A
IF = 7.5 A
IF = 5 A
IF = 7.5 A
Reverse current
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.58
0.67
0.50
0.60
-
6.6
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RθJC
VFT760
6.5
MAX.
-
0.80
-
0.72
700
25
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AC
VFT760-M3/4W
1.68
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
9
8
7
6
5
4
3
2
1 Mounted on Specific Heatsink
0
0 25 50 75 100 125
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
7
D = 0.5 D = 0.8
6
D = 0.3
5 D = 0.2
4
D = 0.1
3
2
D = 1.0
T
1
D = tp/T
tp
0
0123456789
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89252
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 18-Nov-10
Datasheet pdf - http://www.DataSheet4U.net/




 VFT760
www.DataSheet.co.kr
New Product
VFT760
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics
10
Junction to Case
1
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
ITO-220AC
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
PIN
12
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
Document Number: 89252 For technical questions within your region, please contact one of the following:
Revision: 18-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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