Transistors
2SC2925
Silicon NPN epitaxial planar type
For low-frequency output amplification
Unit: mm
5.0±0.2
4.0±0....
Transistors
2SC2925
Silicon
NPN epitaxial planar type
For low-frequency output amplification
Unit: mm
5.0±0.2
4.0±0.2
■ Features
5.1±0.2
High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.7±0.2 12.9±0.5
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
60
V
pe) Collector-emitter voltage (Base open) VCEO
50
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
15
2.3±0.2
V
sta tinu Collector current
IC
0.7
A
a e cycle iscon Peak collector current
ICP
1.5
A
life d, d Collector power dissipation
PC
750
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
0.45+–00..115 2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package
in n es follopwlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter c ed in ce ty Collector-base voltage (Emitter open)
tinu nan Collector-emitter voltage (Base open)
M is iscon ainte Emitter-base voltage (Collector open)
e/D e, m Collector-base cutoff current (Emitter open)
D anc typ Collector-emitter cutoff current (Base open)
inten ance Forward current transfer ratio * Ma ten Collector-emitter saturation voltage main Collector output capacitance ed (Common base, input open circuited)
Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) Cob
Conditions IC = 10 µA, ...