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Schottky Rectifier. VSB1545 Datasheet

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Schottky Rectifier. VSB1545 Datasheet






VSB1545 Rectifier. Datasheet pdf. Equivalent




VSB1545 Rectifier. Datasheet pdf. Equivalent





Part

VSB1545

Description

Photovoltaic Solar Cell Protection Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VSB154 5 Vishay General Semiconductor Photovo ltaic Solar Cell Protection Schottky Re ctifier Ultra Low VF = 0.33 V at IF = 5 .0 A FEATURES • Trench MOS Schottky t echnology TMBS ® • Low forward vo ltage drop, low power losses • High e fficiency operation • High forward su rge capability • Solder dip 275 °C m ax. 10 s, per JESD 22-B106 P6.
Manufacture

Vishay

Datasheet
Download VSB1545 Datasheet


Vishay VSB1545

VSB1545; 00 • Compliant to RoHS Directive 2002 /95/EC and in accordance to WEEE 2002/9 6/EC • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTE RISTICS IF(AV) VRRM IFSM VF at IF = 15 A TOP max. 15 A 45 V 200 A 0.44 V 150 C TYPICAL APPLICATIONS For use in sol ar cell junction box as a bypass diode for protection, using DC forward curren t without reverse bias..


Vishay VSB1545

MECHANICAL DATA Case: P600 Molding com pound meets UL 94 V-0 flammability rati ng Base P/N-M3 - halogen-free, RoHS com pliant, and commercial grade Terminals: Matte tin plated leads, solderable J-S TD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarit y: Color band denotes cathode end per MAXIMUM RATINGS (TA = 25 °C unless oth erwise noted) PARAM.


Vishay VSB1545

ETER Device marking code Maximum repetit ive peak reverse voltage Maximum averag e forward rectified current (fig. 1) Pe ak forward surge current 8.3 ms single half sine-wave superimposed on rated lo ad Operating junction temperature range Storage temperature range Junction tem perature in DC forward current without reverse bias, t ≤ 1 h (fig. 2) VRRM I F(AV) (1) IF(AV) (2).

Part

VSB1545

Description

Photovoltaic Solar Cell Protection Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VSB154 5 Vishay General Semiconductor Photovo ltaic Solar Cell Protection Schottky Re ctifier Ultra Low VF = 0.33 V at IF = 5 .0 A FEATURES • Trench MOS Schottky t echnology TMBS ® • Low forward vo ltage drop, low power losses • High e fficiency operation • High forward su rge capability • Solder dip 275 °C m ax. 10 s, per JESD 22-B106 P6.
Manufacture

Vishay

Datasheet
Download VSB1545 Datasheet




 VSB1545
www.DataSheet.co.kr
New Product
VSB1545
Vishay General Semiconductor
Photovoltaic Solar Cell Protection Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 5.0 A
TMBS®
P600
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
IF(AV)
15 A
VRRM
45 V
IFSM
200 A
VF at IF = 15 A
0.44 V
TOP max.
150 °C
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: P600
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV) (1)
IF(AV) (2)
IFSM
Operating junction temperature range
Storage temperature range
Junction temperature in DC forward current
without reverse bias, t 1 h (fig. 2)
TOP
TSTG
TJ (3)
Notes
(1) With heatsink
(2) Without heatsink, free air
(3) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
VSB1545
V1545
45
15
6
200
- 40 to + 150
- 40 to + 175
200
UNIT
V
A
A
°C
°C
°C
Document Number: 89390 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VSB1545
www.DataSheet.co.kr
New Product
VSB1545
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 5.0 A
IF = 7.5 A
IF = 15 A
IF = 5.0 A
IF = 7.5 A
IF = 15 A
Reverse current
VR = 45 V
Typical junction capacitance
4.0 V, 1 MHz
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: 40 ms pulse width
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
CJ
0.44
0.46
0.51
0.33
0.36
0.44
11.6
7.5
1290
MAX.
-
-
0.59
-
-
0.54
800
25
-
UNIT
V
μA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB1545
Thermal resistance
Typical thermal resistance
RθJA (1)
RθJL (1)
RθJL (2)
55
3.5
2.5
Notes
(1) Without heatsink, free air; units mounted on PCB with 2 mm x 2 mm copper pad areas at 9.5 mm lead length
(2) Leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSB1545-M3/54
1.88
54
VSB1545-M3/73
1.88
73
BASE QUANTITY
800
300
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8
7
Free Air, without Heatsink
6
5
4
3
2
1
0
0 25 50 75 100 125 150 175
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
120
100
DC Current with Heatsink
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Ambient Temperature (°C)
Fig. 2 - Rated Forward Current vs. Ambient Temperature
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89390
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 05-Jan-11
Datasheet pdf - http://www.DataSheet4U.net/




 VSB1545
www.DataSheet.co.kr
New Product
VSB1545
Vishay General Semiconductor
10
D = 0.5
9
D = 0.3
D = 0.8
8
7 D = 0.2
6
5 D = 0.1
D = 1.0
4
T
3
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
100 000
10 000
1000
TA = 150 °C
TA = 125 °C
TA = 100 °C
100
10
TA = 25 °C
1
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.1
0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage (V)
0.8
Fig. 4 - Typical Instantaneous Forward Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
P600
100
0.1
1 10
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
100
0.360 (9.1)
0.340 (8.6)
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Document Number: 89390 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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