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Bridge Rectifiers. VSIB10A80 Datasheet

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Bridge Rectifiers. VSIB10A80 Datasheet






VSIB10A80 Rectifiers. Datasheet pdf. Equivalent




VSIB10A80 Rectifiers. Datasheet pdf. Equivalent





Part

VSIB10A80

Description

Single-Phase Single In-Line Bridge Rectifiers



Feature


www.DataSheet.co.kr New Product VSIB10 A20 thru VSIB10A80 Vishay General Semic onductor Single-Phase Single In-Line B ridge Rectifiers FEATURES • UL recogn ition file number E54214 • Thin singl e in-line package • Glass passivated chip junction • High surge current ca pability • High case dielectric stren gth of 1500 VRMS • Solder dip 260 °C , 40 s • Component in accordanc.
Manufacture

Vishay

Datasheet
Download VSIB10A80 Datasheet


Vishay VSIB10A80

VSIB10A80; e to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose u se in ac-to-dc bridge full wave rectifi cation for switching power supply, home appliances, office equipment, industri al automation applications. 10 A 200 V to 800 V 180 A 10 µA 1.0 V 150 °C ~ ~ ~ ~ Case Style GSIB-5S PRIMARY C HARACTERISTICS IF(AV) VRRM IFSM IR VF T J max. MECHANICAL D.


Vishay VSIB10A80

ATA Case: GSIB-5S Epoxy meets UL 94 V-0 flammability rating Terminals: Matte ti n plated leads, solderable per J-STD-00 2 and JESD22-B102 E3 suffix for consume r grade, meets JESD 201 class 1A whiske r test Polarity: As marked on body Moun ting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 i nches-lbs) MAXIMUM RATINGS (TA = 25 ° C unless otherwise .


Vishay VSIB10A80

noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Ma ximum DC blocking voltage Maximum avera ge forward rectified output current at TC = 110 °C Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Op erating junction and storage temperatur e range Note: (1) Unit case mounted on aluminum plate heat.

Part

VSIB10A80

Description

Single-Phase Single In-Line Bridge Rectifiers



Feature


www.DataSheet.co.kr New Product VSIB10 A20 thru VSIB10A80 Vishay General Semic onductor Single-Phase Single In-Line B ridge Rectifiers FEATURES • UL recogn ition file number E54214 • Thin singl e in-line package • Glass passivated chip junction • High surge current ca pability • High case dielectric stren gth of 1500 VRMS • Solder dip 260 °C , 40 s • Component in accordanc.
Manufacture

Vishay

Datasheet
Download VSIB10A80 Datasheet




 VSIB10A80
www.DataSheet.co.kr
New Product
VSIB10A20 thru VSIB10A80
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
~~ ~
Case Style GSIB-5S
~
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
VF
TJ max.
10 A
200 V to 800 V
180 A
10 µA
1.0 V
150 °C
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, industrial automation
applications.
MECHANICAL DATA
Case: GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VSIB10A20
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
200
140
200
Maximum average forward rectified output
current at TC = 110 °C
IF(AV)
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
Rating for fusing (t < 8.3 ms)
I2t
Operating junction and storage temperature range TJ, TSTG
Note:
(1) Unit case mounted on aluminum plate heatsink
VSIB10A40
400
280
400
VSIB10A60
600
420
600
10 (1)
180
130
- 55 to + 150
VSIB10A80
800
560
800
UNIT
V
V
V
A
A
A2s
°C
Document Number: 84651 For technical questions within your region, please contact one of the following:
Revision: 15-Dec-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VSIB10A80
www.DataSheet.co.kr
New Product
VSIB10A20 thru VSIB10A80
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL VSIB10A20 VSIB10A40 VSIB10A60 VSIB10A80
Maximum instantaneous forward
voltage drop per diode
5.0 A
VF
1.00
Maximum DC reverse current at
TA = 25 °C
rated DC blocking voltage per diode TA = 125 °C
IR
10
250
UNIT
V
µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VSIB10A20 VSIB10A40 VSIB10A60 VSIB10A80
Typical thermal resistance
RθJC
1.4 (1)
UNIT
°C/W
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSIB10A60-E3/45
7.0
45
BASE QUANTITY
20
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
Heatsink Mounting, TC
8
6
4
P.C.B. Mounting, TA
2
0
0 50 100 150
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
210
180
TJ = TJ Max.
Single Sine-Wave
150
120
90
60
30 1.0 Cycle
0
1 10 100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 84651
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 15-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




 VSIB10A80
www.DataSheet.co.kr
New Product
VSIB10A20 thru VSIB10A80
Vishay General Semiconductor
100
TJ = 150 °C
10
1
0.1
TJ = 25 °C
TJ = 125 °C
0.01
0.3
0.5 0.7 0.9 1.1
Instantaneous Forward Voltage (V)
1.3
Figure 3. Typical Forward Characteristics Per Diode
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance Per Diode
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
0.1 TJ = 25 °C
0.01
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1
0.1
0.01
0.1 1 10
t - Heating Time (s)
100
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in millimeters
Case Style GSIB-5S
30 ± 0.3
4.6 ± 0.2
3.6 ± 0.2
2.5 ± 0.2
+
2.2 ± 0.2
2.7 ± 0.2
1 ± 0.1
7.5 7.5
10 ± 0.2 ± 0.2 ± 0.2
0.7 ± 0.1
Document Number: 84651 For technical questions within your region, please contact one of the following:
Revision: 15-Dec-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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