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Bridge Rectifiers. VSIB6A60 Datasheet

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Bridge Rectifiers. VSIB6A60 Datasheet






VSIB6A60 Rectifiers. Datasheet pdf. Equivalent




VSIB6A60 Rectifiers. Datasheet pdf. Equivalent





Part

VSIB6A60

Description

Single-Phase Single In-Line Bridge Rectifiers



Feature


www.DataSheet.co.kr New Product VSIB6A 20 thru VSIB6A80 Vishay General Semicon ductor Single-Phase Single In-Line Bri dge Rectifiers FEATURES • UL recognit ion file number E54214 • Thin single in-line package • Glass passivated ch ip junction • High surge current capa bility • High case dielectric strengt h of 1500 VRMS • Solder dip 260 °C, 40 s • Component in accordance .
Manufacture

Vishay

Datasheet
Download VSIB6A60 Datasheet


Vishay VSIB6A60

VSIB6A60; to RoHS 2002/95/EC and WEEE 2002/96/EC T YPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectifica tion for switching power supply, home a ppliances, office equipment, industrial automation applications. 6.0 A 200 V t o 800 V 150 A 10 µA 1.0 V 150 °C ~ ~ ~ ~ Case Style GSIB-5S PRIMARY CH ARACTERISTICS IF(AV) VRRM IFSM IR VF TJ max. MECHANICAL DA.


Vishay VSIB6A60

TA Case: GSIB-5S Epoxy meets UL 94 V-0 f lammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body Mount ing Torque: 10 cm-kg (8.8 inches-lbs) m ax. Recommended Torque: 5.7 cm-kg (5 in ches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise n.


Vishay VSIB6A60

oted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Max imum DC blocking voltage Maximum averag e forward rectified output current at T C = 100 °C TA = 25 °C SYMBOL VRRM VRM S VDC IF(AV) IFSM I2t TJ, TSTG VSIB6A20 200 140 200 VSIB6A40 400 280 400 6.0 ( 1) 2.8 (2) 150 93 - 55 to + 150 VSIB6A6 0 600 420 600 VSIB6A80 800 560 800 UNIT V V V A A A2 s °C .

Part

VSIB6A60

Description

Single-Phase Single In-Line Bridge Rectifiers



Feature


www.DataSheet.co.kr New Product VSIB6A 20 thru VSIB6A80 Vishay General Semicon ductor Single-Phase Single In-Line Bri dge Rectifiers FEATURES • UL recognit ion file number E54214 • Thin single in-line package • Glass passivated ch ip junction • High surge current capa bility • High case dielectric strengt h of 1500 VRMS • Solder dip 260 °C, 40 s • Component in accordance .
Manufacture

Vishay

Datasheet
Download VSIB6A60 Datasheet




 VSIB6A60
www.DataSheet.co.kr
New Product
VSIB6A20 thru VSIB6A80
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
~~ ~
Case Style GSIB-5S
~
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
VF
TJ max.
6.0 A
200 V to 800 V
150 A
10 µA
1.0 V
150 °C
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, industrial automation
applications.
MECHANICAL DATA
Case: GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VSIB6A20
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
200
140
200
Maximum average forward rectified
output current at
TC = 100 °C
TA = 25 °C
IF(AV)
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
Rating for fusing (t < 8.3 ms)
I2t
Operating junction and storage temperature range
TJ, TSTG
VSIB6A40 VSIB6A60
400 600
280 420
400 600
6.0 (1)
2.8 (2)
150
93
- 55 to + 150
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
VSIB6A80
800
560
800
UNIT
V
V
V
A
A
A2s
°C
Document Number: 84657 For technical questions within your region, please contact one of the following:
Revision: 15-Dec-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VSIB6A60
www.DataSheet.co.kr
New Product
VSIB6A20 thru VSIB6A80
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL VSIB6A20 VSIB6A40 VSIB6A60
Maximum instantaneous forward
voltage drop per diode
3.0 A
VF
1.00
Maximum DC reverse current at
TA = 25 °C
rated DC blocking voltage per diode TA = 125 °C
IR
10
250
VSIB6A80
UNIT
V
µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VSIB6A20 VSIB6A40 VSIB6A60
Typical thermal resistance
RθJA
RθJC
22 (2)
3.4 (1)
VSIB6A80
UNIT
°C/W
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSIB6A60-E3/45
7.0
45
BASE QUANTITY
20
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8
Heatsink Mounting, TC
6
4
P.C.B. Mounting, TA
2
0
0 50 100 150
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
150
TJ = TJ Max.
Single Sine-Wave
100
50
1.0 Cycle
0
1 10 100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 84657
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 15-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




 VSIB6A60
www.DataSheet.co.kr
New Product
VSIB6A20 thru VSIB6A80
Vishay General Semiconductor
100
TJ = 150 °C
10
1 TJ = 25 °C
TJ = 125 °C
0.1
0.01
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
1.2
Figure 3. Typical Forward Characteristics Per Diode
1000
100
10
1
0.1 1 10 100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
0.1 TJ = 25 °C
0.01
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1
0.1
0.01
0.1 1 10
t - Heating Time (s)
100
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in millimeters
Case Style GSIB-5S
30 ± 0.3
4.6 ± 0.2
3.6 ± 0.2
2.5 ± 0.2
+
2.2 ± 0.2
2.7 ± 0.2
1 ± 0.1
7.5 7.5
10 ± 0.2 ± 0.2 ± 0.2
0.7 ± 0.1
Document Number: 84657 For technical questions within your region, please contact one of the following:
Revision: 15-Dec-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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