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Power MOSFET. IXFT70N15 Datasheet

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Power MOSFET. IXFT70N15 Datasheet






IXFT70N15 MOSFET. Datasheet pdf. Equivalent




IXFT70N15 MOSFET. Datasheet pdf. Equivalent





Part

IXFT70N15

Description

Power MOSFET



Feature


www.DataSheet.co.kr Advanced Technical Information HiPerFETTM Power MOSFETs N -Channel Enhancement Mode Avalanche Rat ed, High dv/dt, Low trr IXFH 70N15 IXF T 70N15 VDSS ID25 RDS(on) = 150 V = 7 0 A = 28 mW trr £ 250ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/d t PD TJ TJM Tstg TL Md Weight Test Con ditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW .
Manufacture

IXYS Corporation

Datasheet
Download IXFT70N15 Datasheet


IXYS Corporation IXFT70N15

IXFT70N15; Continuous Transient TC = 25°C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25°C TC = 25°C IS £ IDM, di/ dt £ 100 A/ms, VDD £ VDSS, TJ £ 150 C, RG = 2 W TC = 25°C Maximum Rating s 150 150 ±20 ±30 70 280 70 30 1.0 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C T O-247 AD (IXFH) (TAB) TO-268 (IXFT) C ase Style G S (TAB) G = Gate S =.


IXYS Corporation IXFT70N15

Source D = Drain TAB = Drain 1.6 mm ( 0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 300 1.13/10 N m/lb.in. 6 4 g g Features • • • International standard packages Low RDS (on) HDMOSTM process Rugged polysil icon gate cell structure Unclamped Indu ctive Switching (UIS) rated • Low pac kage inductance - easy to drive and to protect • Fast intrinsic Rec.


IXYS Corporation IXFT70N15

tifier Symbol Test Conditions (TJ = 25 C, unless otherwise specified) VDSS VG S(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Valu es Min. Typ. Max. 150 2.0 4.0 ±100 25 750 28 V V nA mA mA mW Advantages • Easy to mount • Space savings • Hig h power density VGS = 10 V, .

Part

IXFT70N15

Description

Power MOSFET



Feature


www.DataSheet.co.kr Advanced Technical Information HiPerFETTM Power MOSFETs N -Channel Enhancement Mode Avalanche Rat ed, High dv/dt, Low trr IXFH 70N15 IXF T 70N15 VDSS ID25 RDS(on) = 150 V = 7 0 A = 28 mW trr £ 250ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/d t PD TJ TJM Tstg TL Md Weight Test Con ditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW .
Manufacture

IXYS Corporation

Datasheet
Download IXFT70N15 Datasheet




 IXFT70N15
www.DataSheet.co.kr
Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFH 70N15
IXFT 70N15
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
VDSS
ID25
RDS(on)
= 150 V
= 70 A
= 28 mW
trr £ 250ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
150 V
150 V
±20 V
±30 V
70 A
280 A
70 A
30 mJ
1.0 J
5 V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 mA
V
GS(th)
V
DS
=
V,
GS
I
D
=
4
mA
IGSS VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
R
DS(on)
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
150 V
2.0 4.0 V
±100 nA
25 mA
750 mA
28 mW
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98583A (6/99)
1-2
Datasheet pdf - http://www.DataSheet4U.net/




 IXFT70N15
www.DataSheet.co.kr
IXFH 70N15
IXFT 70N15
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 2 W (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247)
30 45
S
3600
1080
360
pF
pF
pF
35 ns
52 ns
70 ns
23 ns
180 nC
28 nC
92 nC
0.42 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive;
VSD IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
70 A
280 A
1.5 V
t
rr
QRM IF = 25A,-di/dt = 100 A/ms, VR = 25 V
IRM
250 ns
0.85 mC
8A
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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