BSC077N12NS3G
MOSFET
OptiMOSTM3Power-Transistor,120V
Features
•N-channel,normallevel •ExcellentgatechargexR...
BSC077N12NS3G
MOSFET
OptiMOSTM3Power-
Transistor,120V
Features
N-channel,normallevel ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) 150°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Idealforhigh-frequencyswitchingandsynchronousrectification Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 120 V
RDS(on),max
7.7
mΩ
ID 98 A
SuperSO8
8 7 65
56 78
1 23 4
4321
S1 8D S2 7D S3 6D G4 5D
Type/OrderingCode BSC077N12NS3 G
Package PG-TDSON-8
Marking 077N12NS
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.8,2015-12-15
OptiMOSTM3Power-
Transistor,120V
BSC077N12NS3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximu...
