BSC079N10NSG

www.DataSheet.co.kr BSC079N10NS G OptiMOS™2 Power-Transistor Features N-channel, Normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 7.9 100 V mΩ A Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type BSC079N10NS G Package PG-TDSON-8 Marking 079N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W 2) Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 100 64 13.4 400 377 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=50 A, R GS=25 Ω mJ V W °C T C=25 °C 156 -55 ... 150 55/150/56 J-STD20 and JESD22 Rev. 1.05 page 1 2009-11-03 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr BSC079N10NS G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC bottom top Thermal resistance, junction - ambient R thJA minimal footprint 6 cm2 cooling area2) 0.8 18 62 45 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source...