2SC2960

Ordering number:EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features · Fast switching speed. · High breakdown voltage. Package Dimensions unit:mm 2033 [2SA1481/2SC2960] ( ) : 2SA1481 B : Base C : Collector E : Emitter SANYO : SPA Conditions Ratings (–)60 (–)50 (–)5 (–)150 (–)400 250 150 –55 to +150 Unit V V V mA mA mW Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg ˚C ˚C Electrical Characteristic at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Delay Time Rise Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=(–)400V, IE=0 VEB=(–)4V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA VCB=(–)6V, f=1MHz IC=(–)10mA, IB=(–)1mA IC=(–)10mA, IB=(–)1mA (–)60 (–)50 (–)5 40 80 (120) tstg tf See specified Test Circuit See specified Test Circuit 230 (190) 160 (240) 60 130 (230) 450 (700) 250 (390) 100* 100 2.7 (4.0) (–)0.1 (–)0.75 (–)0.4 (–)1.1 Conditions Ratings min typ max (–)0.1 (–)0.1 560* MHz pF pF V V ...