H5TQ2G83DFR-xxI

www.DataSheet.co.kr Preliminary 2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ2G83DFR-xxC H5TQ2G63DFR-xxC H5TQ2G83DFR-xxI H5TQ2G63DFR-xxI * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.05 / Nov. 2011 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Preliminary Revision History Revision No. 0.01 0.02 0.03 0.04 0.05 History Preliminary version release Add temperature information in feature update operation frequency update IDD 1600,1866,2133 update IDD data Draft Date July. 2011 Aug. 2011 Oct. 2011 Nov. 2011 Nov. 2011 Remark Preliminary Preliminary Preliminary Preliminary Preliminary Rev. 0.05 / Nov. 2011 2 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Preliminary Description tions which requires large memory density and high bandwidth. Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth. The H5TQ2G83DFR-xxC, H5TQ2G63DFR-xxC,H5TQ2G83DFR-xxI, H5TQ2G63DFR-xxI are a 2,147,483,648bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applica- Device Features and O...