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Schottky Diode. C3D10170H Datasheet

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Schottky Diode. C3D10170H Datasheet






C3D10170H Diode. Datasheet pdf. Equivalent




C3D10170H Diode. Datasheet pdf. Equivalent





Part

C3D10170H

Description

Silicon Carbide Schottky Diode



Feature


www.DataSheet.co.kr C3D10170H–Silicon Carbide Schottky Diode Z-Rec™ Recti fier Features VRRM = IF; TC<135˚C 1700 V = 14.4 A 96 nC Qc = Pack age • • • • • • • 1700-Volt Schottky Rectifier Zero Rev erse Recovery Current Zero Forward Reco very Voltage High-Frequency Operation T emperature-Independent Switching Behavi or Extremely Fast Switching Halogen-F.
Manufacture

Cree

Datasheet
Download C3D10170H Datasheet


Cree C3D10170H

C3D10170H; ree; RoHS Compliant TO-247-2 Benefits PIN 1 PIN 2 • • • • • Replace Bipolar with Unipolar Rectif iers Essentially No Switching Losses Hi gher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without T hermal Runaway CASE Part Number C3D10 170H Package TO-247-2 Marking C3D1017 0 Maximum Ratings Symbol VRRM VRSM VDC IF IFRM IFSM Parameter Rep.


Cree C3D10170H

etitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Con tinuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive P eak Forward Surge Current Power Dissipa tion Maximum Case Temperature Operating Junction Range Storage Temperature Ran ge TO-247 Mounting Torque Value 1700 1 700 1700 14.4 45 26 55 41 231 100 135 - 55 to +175 -55 to .


Cree C3D10170H

+135 1 8.8 Unit V V V A A A W ˚C ˚C C Nm lbf-in M3 Screw 6-32 Screw TC<135 ˚C Test Conditions Note TC=25˚C, t P=10 ms, Half Sine Wave, D=1 TC=110˚C, tP=10 ms, Half Sine Wave, D=1 TC=25˚C , tP=10ms, Half Sine Wave, D=1 TC=110˚ C, tP=10 ms, Half Sine Wave, D=1 TC=25 C TC=110˚C D10170H Rev. Datasheet: C 3 Ptot Tc TJ Tstg Subject to change w ithout notice. www.cree.com/.

Part

C3D10170H

Description

Silicon Carbide Schottky Diode



Feature


www.DataSheet.co.kr C3D10170H–Silicon Carbide Schottky Diode Z-Rec™ Recti fier Features VRRM = IF; TC<135˚C 1700 V = 14.4 A 96 nC Qc = Pack age • • • • • • • 1700-Volt Schottky Rectifier Zero Rev erse Recovery Current Zero Forward Reco very Voltage High-Frequency Operation T emperature-Independent Switching Behavi or Extremely Fast Switching Halogen-F.
Manufacture

Cree

Datasheet
Download C3D10170H Datasheet




 C3D10170H
www.DataSheet.co.kr
C3D10170H–Silicon Carbide Schottky Diode
Z-RecRectifier
Features
1700-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Halogen-Free; RoHS Compliant
Package
TO-247-2
VRRM =
1700 V
IF; TC<135˚C = 14.4 A
Qc =
96 nC
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Maximum Ratings
Symbol
Parameter
VRRM
VRSM
VDC
IF
IFRM
IFSM
Ptot
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge
Current
Power Dissipation
Tc Maximum Case Temperature
TJ Operating Junction Range
Tstg Storage Temperature Range
TO-247 Mounting Torque
PIN 1
PIN 2
CASE
Part Number
C3D10170H
Package
TO-247-2
Marking
C3D10170
Value Unit
Test Conditions
Note
1700
1700
1700
V
V
V
14.4
45
26
55
41
231
100
135
A TC<135˚C
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinieneWWavaev,e,DD==11
A TTCC==2151˚0C˚C, ,tPt=P=1100msm, sH, aHlfaSlfinSeinWe aWvaev,eD, =D1=1
W TTCC==2151˚0C˚C
˚C
-55 to
+175
-55 to
+135
1
8.8
˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Subject to change without notice.
www.cree.com/power
1
Datasheet pdf - http://www.DataSheet4U.net/




 C3D10170H
www.DataSheet.co.kr
Electrical Characteristics
Symbol
Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.7 2
3 3.5
V
IIFF
=
=
10
10
A
A
TTJJ==2157°5C°C
IR Reverse Current
20 60
100 300
μA
VVRR
=
=
1700
1700
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
96
nC VdiR/d=t 1=702000V,AI/Fμ=s 10 A
TJ = 25°C
C Total Capacitance
827
78
41
pF
VVVRRR
=
=
=
0 V,
200
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Note
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.65
Unit
°C/W
Typical Performance
20
18
16
14
12
10
8 TTTJJJ===-275555°°°CCC
TJ =125°C
6 TJ =175°C
4
2
0
0123456
VF (V)
Figure 1. Forward Characteristics
7
5
4
3 TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
2
1
0
0 250 500 750 1000 1250 1500 1750 2000 2250
VR (V)
Figure 2. Reverse Characteristics
2 C3D10170H Rev. -
Datasheet pdf - http://www.DataSheet4U.net/




 C3D10170H
www.DataSheet.co.kr
Typical Performance
70 250
60
200
50 10% Duty
30% Duty
50% Duty
70% Duty
150
40 DC
30
20
10
0
25 50 75 100 125 150 175
TC ˚C
Figure 3. Current Derating
100
50
0
25 50 75 100 125 150 175
TC ˚C
Figure 4. Power Derating
80
70
60
50
40
30
20
10
0
0 200 400 600 800 1000
VR (V)
900
800
700
600
500
400
300
200
100
0
0.1 1
10 100 1000 10000
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
3 C3D10170H Rev. -
Datasheet pdf - http://www.DataSheet4U.net/






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