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Schottky Diode. C3D10065A Datasheet







C3D10065A Diode. Datasheet pdf. Equivalent






Part

C3D10065A

Description

Silicon Carbide Schottky Diode

Manufacture

Cree

Datasheet
Download C3D10065A Datasheet


Cree C3D10065A

C3D10065A; www.DataSheet.co.kr C3D10065A–Silicon Carbide Schottky Diode Z-Rec™ Recti fier Features VRRM = 650 V IF(AVG) = 10 A Qc = 25 nC Package • • • • • • • 650-Volt Sch ottky Rectifier Zero Reverse Recovery C urrent Zero Forward Recovery Voltage Hi gh-Frequency Operation Temperature-Inde pendent Switching Behavior Extremely Fa st Switching Positive Temperature Co.


Cree C3D10065A

efficient on VF TO-220-2 Benefits • • • • • R eplace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requ irements Parallel Devices Without Therm al Runaway PIN 1 PIN 2 CASE Applicat ions • • • Switch Mode Power Supplies Power Factor Correcti on - Typical PFC Pout : 1000W-2000 W Motor Drives - Typical Power : 3HP -5HP Part Number C3D10065A Packag e TO-220-2 Marking C3D10065 Maximum R atings Symbol VRRM VRSM VDC IF(AVG) Pa rameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Average Forward Current Value 650 650 650 10 67 44 90 71 250 136.3 5 9 -55 to +175 1 8.8 Unit V V V A TC=15 0˚C Test Conditio.



Part

C3D10065A

Description

Silicon Carbide Schottky Diode

Manufacture

Cree

Datasheet
Download C3D10065A Datasheet




 C3D10065A
www.DataSheet.co.kr
C3D10065A–Silicon Carbide Schottky Diode
Z-RecRectifier
Features
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC
Motor Drives
Pout
:
1000W-2000W
- Typical Power : 3HP-5HP
Package
TO-220-2
PIN 1
PIN 2
CASE
Part Number
C3D10065A
Package
TO-220-2
VRRM = 650 V
IF(AVG) = 10 A
Qc = 25 nC
Marking
C3D10065
Maximum Ratings
Symbol
Parameter
VRRM
VRSM
VDC
IF(AVG)
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM
IFSM
Ptot
TJ , Tstg
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
Value Unit
Test Conditions
Note
650 V
650 V
650 V
10 A TC=150˚C
67
44
90
71
250
136.3
59
-55 to
+175
1
8.8
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinieneWWavaev,e,DD==00.3.3
A TTCC==2151˚0C˚C, ,tPt=P=1100msm, sH, aHlfaSlfinSeinWe aWvaev,eD, =D0=.03.3
A TC=25˚C, tP=10 µs, Pulse
W TTCC==2151˚0C˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Subject to change without notice.
www.cree.com
1
Datasheet pdf - http://www.DataSheet4U.net/





 C3D10065A
www.DataSheet.co.kr
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5
2.0
1.8
2.4
V
IIFF
=
=
10
10
AA TTJJ==2157°5C°C
IR Reverse Current
12
24
60
220
μA
VVRR
=
=
650
650
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
25
nC
VdiR/d=t
650 V,
= 500
IAF/=μs10
A
TJ = 25°C
C Total Capacitance
480
50
42
pF
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f =
= 25˚C, f
= 25˚C, f
1 MHz
= 1 MHz
= 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1.1
Unit
°C/W
Typical Performance
Note
20
18
16
14
TTTTJJJJ
=
=
=
=
25°C
75°C
125°C
175°C
12
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF Forward Voltage (V)
Figure 1. Forward Characteristics
100
90
80
70
60
50
40
30 TJ = 25°C
TJ = 75°C
20 TJ = 125°C
10 TJ = 175°C
0 0 100 200 300 400 500 600 700 800 900
VR Reverse Voltage (V)
Figure 2. Reverse Characteristics
2 C3D10065A Rev. -
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