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Schottky Rectifier. VBT10200C Datasheet

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Schottky Rectifier. VBT10200C Datasheet






VBT10200C Rectifier. Datasheet pdf. Equivalent




VBT10200C Rectifier. Datasheet pdf. Equivalent





Part

VBT10200C

Description

Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT1020 0C, VFT10200C, VBT10200C, VIT10200C Vis hay General Semiconductor Trench MOS B arrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AB TMBS FEATURES ITO-220AB • Trench MOS S chottky technology • Low forward volt age drop, low power losses • High eff iciency operation • Meets MSL level 1 , per J-STD-020, LF maximum.
Manufacture

Vishay

Datasheet
Download VBT10200C Datasheet


Vishay VBT10200C

VBT10200C; peak of 245 °C (for TO-263AB package) 2 VT10200C PIN 1 PIN 3 PIN 2 CASE 3 1 VFT10200C PIN 1 PIN 3 PIN 2 2 3 • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and T O-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 TYPICAL APPLICAT IONS For use in high frequency converte rs, switching power supp.


Vishay VBT10200C

lies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse batter y protection. TO-263AB K K TO-262AA MECHANICAL DATA 2 1 1 VBT10200C PIN 1 P IN 2 K HEATSINK 2 3 Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Moldin g compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, c ommercial grade Terminals: Matte tin pl ated leads, solder.


Vishay VBT10200C

able J-STD-002 and JESD 22-B102 E3 suffi x meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per VIT10200C PIN 1 PI N 3 PIN 2 K PRIMARY CHARACTERISTICS IF (AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 200 V 80 A 0.65 V 150 °C M AXIMUM RATINGS (TA = 25 °C unless othe rwise noted) PARAMETER Maximum repetiti ve peak reverse volt.

Part

VBT10200C

Description

Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT1020 0C, VFT10200C, VBT10200C, VIT10200C Vis hay General Semiconductor Trench MOS B arrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AB TMBS FEATURES ITO-220AB • Trench MOS S chottky technology • Low forward volt age drop, low power losses • High eff iciency operation • Meets MSL level 1 , per J-STD-020, LF maximum.
Manufacture

Vishay

Datasheet
Download VBT10200C Datasheet




 VBT10200C
www.DataSheet.co.kr
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TO-220AB
TMBS ®
ITO-220AB
VT10200C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT10200C
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
2
1
VBT10200C
PIN 1
K
PIN 2
HEATSINK
VIT10200C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
200 V
IFSM
80 A
VF at IF = 5.0 A
0.65 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT10200C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VFT10200C VBT10200C
200
10.0
5.0
80
30
0.5
10 000
1500
- 40 to + 150
VIT10200C
UNIT
V
A
A
mJ
A
V/μs
V
°C
Document Number: 89177 For technical questions within your region, please contact one of the following:
Revision: 09-Dec-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VBT10200C
www.DataSheet.co.kr
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode
IR = 1.0 mA
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Reverse current per diode
VR = 180 V
VR = 200 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
200 (minimum)
0.81
1.10
0.58
0.65
1.7
1.8
-
2.5
MAX.
-
-
1.60
-
0.73
-
-
150
10
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT10200C VFT10200C
per diode
Typical thermal resistance
per device
RθJC
3.5
2.5
7.0
5.5
VBT10200C
3.5
2.5
VIT10200C
3.5
2.5
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT10200C-E3/4W
1.88
ITO-220AB
VFT10200C-E3/4W
1.72
TO-263AB
VBT10200C-E3/4W
1.37
TO-263AB
VBT10200C-E3/8W
1.37
TO-262AA
VIT10200C-E3/4W
1.44
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
V(B,I)T10200C
8
6 VFT10200C
4
2 Mounted on Specific Heatsink
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
9
8
7
6
5
4
3
2
1
0
0
D = 0.8
D = 0.3 D = 0.5
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T tp
1 2 3 4 5 6 7 8 9 10 11
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Device
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89177
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 09-Dec-09
Datasheet pdf - http://www.DataSheet4U.net/




 VBT10200C
www.DataSheet.co.kr
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
TA = 150 °C
1 TA = 125 °C
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
10
Junction to Case
VFT10200C
V(B,I)T10200C
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Device
Document Number: 89177 For technical questions within your region, please contact one of the following:
Revision: 09-Dec-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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