www.DataSheet.co.kr
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
Trench MOS Bar...
www.DataSheet.co.kr
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TO-220AB
TMBS ®
FEATURES
ITO-220AB
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
2 VT10200C
PIN 1 PIN 3 PIN 2 CASE
3 1 VFT10200C
PIN 1 PIN 3 PIN 2
2
3
Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
TO-263AB K K
TO-262AA
MECHANICAL DATA
2 1 1 VBT10200C
PIN 1 PIN 2 K HEATSINK
2
3
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
VIT10200C
PIN 1 PIN 3 PIN 2 K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 200 V 80 A 0.65 V 150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average ...