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VFT10200C

Vishay

Trench MOS Barrier Schottky Rectifier

www.DataSheet.co.kr New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor Trench MOS Bar...


Vishay

VFT10200C

File Download Download VFT10200C Datasheet


Description
www.DataSheet.co.kr New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AB TMBS ® FEATURES ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 VT10200C PIN 1 PIN 3 PIN 2 CASE 3 1 VFT10200C PIN 1 PIN 3 PIN 2 2 3 Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. TO-263AB K K TO-262AA MECHANICAL DATA 2 1 1 VBT10200C PIN 1 PIN 2 K HEATSINK 2 3 Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per VIT10200C PIN 1 PIN 3 PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 200 V 80 A 0.65 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average ...




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