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Schottky Rectifier. VIT5200 Datasheet

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Schottky Rectifier. VIT5200 Datasheet






VIT5200 Rectifier. Datasheet pdf. Equivalent




VIT5200 Rectifier. Datasheet pdf. Equivalent





Part

VIT5200

Description

Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT5200 , VFT5200, VBT5200, VIT5200 Vishay Gene ral Semiconductor Trench MOS Barrier S chottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AC TMBS ® FEATU RES ITO-220AC • Trench MOS Schottky technology • Low forward voltage drop , low power losses • High efficiency operation • Meets MSL level 1, per J- STD-020, LF maximum peak of.
Manufacture

Vishay

Datasheet
Download VIT5200 Datasheet


Vishay VIT5200

VIT5200; 245 °C (for TO-263AB package) 2 VT520 0 PIN 1 PIN 2 CASE 2 1 VFT5200 PIN 1 P IN 2 • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-22 0AC and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in ac cordance to WEEE 2002/96/EC 1 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-.


Vishay VIT5200

ing diode, dc-to-dc converters and rever se battery protection. TO-263AB K K T O-262AA MECHANICAL DATA A NC VBT5200 N C A K HEATSINK A K NC VIT5200 NC A K H EATSINK Case: TO-220AC, ITO-220AC, TO- 263AB and TO-262AA Molding compound mee ts UL 94 V-0 flammability rating Base P /N-E3 - RoHS compliant, commercial grad e Terminals: Matte tin plated leads, so lderable J-STD-002.


Vishay VIT5200

and JESD 22-B102 E3 suffix meets JESD 2 01 class 1A whisker test Polarity: As m arked Mounting Torque: 10 in-lbs maximu m per PRIMARY CHARACTERISTICS IF(AV) V RRM IFSM VF at IF = 5.0 A TJ max. 5.0 A 200 V 80 A 0.65 V 150 °C MAXIMUM RAT INGS (TA = 25 °C unless otherwise note d) PARAMETER Maximum repetitive peak re verse voltage Maximum average forward r ectified current (fi.

Part

VIT5200

Description

Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT5200 , VFT5200, VBT5200, VIT5200 Vishay Gene ral Semiconductor Trench MOS Barrier S chottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AC TMBS ® FEATU RES ITO-220AC • Trench MOS Schottky technology • Low forward voltage drop , low power losses • High efficiency operation • Meets MSL level 1, per J- STD-020, LF maximum peak of.
Manufacture

Vishay

Datasheet
Download VIT5200 Datasheet




 VIT5200
www.DataSheet.co.kr
New Product
VT5200, VFT5200, VBT5200, VIT5200
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TO-220AC
TMBS ®
ITO-220AC
VT5200
PIN 1
PIN 2
1
CASE
2
TO-263AB
K
VFT5200
PIN 1
PIN 2
TO-262AA
K
2
1
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AC, ITO-220AC and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
A
NC
VBT5200
NC K
A HEATSINK
VIT5200
NC
A
K
NC
K
A HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
200 V
IFSM
80 A
VF at IF = 5.0 A
0.65 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VT5200
VFT5200 VBT5200
200
5.0
80
30
0.5
10 000
1500
- 40 to + 150
VIT5200
UNIT
V
A
A
mJ
A
V/μs
V
°C
Document Number: 89176 For technical questions within your region, please contact one of the following:
Revision: 09-Dec-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VIT5200
www.DataSheet.co.kr
New Product
VT5200, VFT5200, VBT5200, VIT5200
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
IR = 1.0 mA
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Reverse current
VR = 180 V
VR = 200 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
200 (minimum)
0.81
1.10
0.58
0.65
1.7
1.8
-
2.5
MAX.
-
-
1.60
-
0.73
-
-
150
10
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT5200
VFT5200
Typical thermal resistance
RθJC
3.5
7.0
VBT5200
3.5
VIT5200
3.5
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
VT5200-E3/4W
1.82
ITO-220AC
VFT5200-E3/4W
1.65
TO-263AB
VBT5200-E3/4W
1.36
TO-263AB
VBT5200-E3/8W
1.36
TO-262AA
VIT5200-E3/4W
1.44
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
6
Resistive or Inductive Load
5
V(B,I)T5200
4
VFT5200
3
2
1
Mounted on Specific Heatsink
0
0 25 50 75 100 125
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
4.8
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
D = 0.5
D = 0.3
D = 0.8
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T tp
12345
Average Forward Current (A)
6
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89176
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 09-Dec-09
Datasheet pdf - http://www.DataSheet4U.net/




 VIT5200
www.DataSheet.co.kr
New Product
VT5200, VFT5200, VBT5200, VIT5200
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
TA = 150 °C
1 TA = 125 °C
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
10
Junction to Case
VFT5200
V(B,I)T5200
1
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89176 For technical questions within your region, please contact one of the following:
Revision: 09-Dec-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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