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Schottky Rectifier. VT1060C Datasheet

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Schottky Rectifier. VT1060C Datasheet






VT1060C Rectifier. Datasheet pdf. Equivalent




VT1060C Rectifier. Datasheet pdf. Equivalent





Part

VT1060C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT1060 C, VIT1060C Vishay General Semiconducto r Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A TMBS ® TO-220AB K TO- 262AA FEATURES • Trench MOS Schottky technology • Low forward voltage dro p, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD .
Manufacture

Vishay

Datasheet
Download VT1060C Datasheet


Vishay VT1060C

VT1060C; 22-B106 • AEC-Q101 qualified 2 VT1060 C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT1060C PIN 1 PIN 3 2 3 1 • Compliant to RoHS Directive 2002/95/EC and in accord ance to WEEE 2002/96/EC • Halogen-fre e according to IEC 61249-2-21 definitio n PIN 2 K TYPICAL APPLICATIONS For us e in high frequency DC/DC converters, s witching power supplies, freewheeling d iodes, OR-ing diode, and.


Vishay VT1060C

reverse battery protection. PRIMARY CH ARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 60 V 100 A 0 .50 V 150 °C MECHANICAL DATA Case: TO -220AB and TO-262AA Molding compound me ets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halo gen-free, RoHS compliant, and AEC-Q101 qualified Terminals.


Vishay VT1060C

: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix m eets JESD 201 class 1A whisker test, HM 3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torq ue: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PA RAMETER Maximum repetitive peak reverse voltage Maximum average forward rectif ied current (fig. 1.

Part

VT1060C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT1060 C, VIT1060C Vishay General Semiconducto r Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A TMBS ® TO-220AB K TO- 262AA FEATURES • Trench MOS Schottky technology • Low forward voltage dro p, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD .
Manufacture

Vishay

Datasheet
Download VT1060C Datasheet




 VT1060C
www.DataSheet.co.kr
New Product
VT1060C, VIT1060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
TO-220AB
TMBS ®
TO-262AA
K
VT1060C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VIT1060C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
60 V
IFSM
100 A
VF at IF = 5.0 A
0.50 V
TJ max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
VT1060C
VIT1060C
60
10
5
100
10 000
- 55 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89232 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




 VT1060C
www.DataSheet.co.kr
New Product
VT1060C, VIT1060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Reverse current per diode
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.49
0.58
0.39
0.50
-
6.6
MAX.
-
0.70
-
0.60
700
25
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT1060C
VIT1060C
Typical thermal resistance
per diode
per device
RθJC
3.5
2.5
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT1060C-M3/4W
1.87
TO-262AA
TO-220AB
TO-262AA
VIT1060C-M3/4W
VT1060CHM3/4W (1)
VIT1060CHM3/4W (1)
1.45
1.87
1.45
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
10
8
6
4
2 Mounted on Specific Heatsink
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
4.0
D = 0.5 D = 0.8
3.5
D = 0.3
3.0
D = 0.2
2.5
2.0 D = 0.1
D = 1.0
1.5 T
1.0
0.5
D = tp/T
tp
0
0123456
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89232
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




 VT1060C
www.DataSheet.co.kr
New Product
VT1060C, VIT1060C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
Junction to Case
1
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
10 000
1000
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
Document Number: 89232 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/






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