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Schottky Rectifier. VT1080S Datasheet

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Schottky Rectifier. VT1080S Datasheet






VT1080S Rectifier. Datasheet pdf. Equivalent




VT1080S Rectifier. Datasheet pdf. Equivalent





Part

VT1080S

Description

Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barr ier Schottky Rectifier Ultra Low VF = 0 .52 V at IF = 5 A TO-220AB TMBS ® T O-262AA K 3 2 1 VT1080S PIN 1 PIN 2 PIN 3 CASE 3 2 1 VIT1080S PIN 1 P IN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward vo ltage drop, low power losses • High e fficiency operation • Sol.
Manufacture

Vishay

Datasheet
Download VT1080S Datasheet


Vishay VT1080S

VT1080S; der bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categoriz ation: for definitions of compliance pl ease see www.vishay.com/doc?99912 TYPIC AL APPLICATIONS For use in high frequen cy DC/DC converters, switching power su pplies, freewheeling diodes, OR-ing dio de, and reverse battery protection. PR IMARY CHARACTERISTICS IF(AV) 10 A VR RM 80 V IFSM 100 A.


Vishay VT1080S

VF at IF = 10 A TJ max. 0.60 V 150 ° C Package TO-220AB, TO-262AA Diode v ariation Single MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compo und meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compl iant, and com .


Vishay VT1080S

.

Part

VT1080S

Description

Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barr ier Schottky Rectifier Ultra Low VF = 0 .52 V at IF = 5 A TO-220AB TMBS ® T O-262AA K 3 2 1 VT1080S PIN 1 PIN 2 PIN 3 CASE 3 2 1 VIT1080S PIN 1 P IN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward vo ltage drop, low power losses • High e fficiency operation • Sol.
Manufacture

Vishay

Datasheet
Download VT1080S Datasheet




 VT1080S
www.vishay.com
VT1080S, VIT1080S
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
3
2
1
VT1080S
PIN 1
PIN 2
PIN 3
CASE
3
2
1
VIT1080S
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
80 V
IFSM
100 A
VF at IF = 10 A
TJ max.
0.60 V
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Single
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
VT1080S
VIT1080S
80
10
100
10 000
-55 to +150
UNIT
V
A
A
V/μs
°C
Revision: 09-Nov-17
1 Document Number: 89238
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VT1080S
www.vishay.com
VT1080S, VIT1080S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
VR = 80 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TYP.
0.57
0.67
0.52
0.60
20
10
MAX.
-
0.81
-
0.70
600
20
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT1080S
VIT1080S
Typical thermal resistance
RJC
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT1080S-M3/4W
1.88
TO-262AA
VIT1080S-M3/4W
1.43
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Revision: 09-Nov-17
2 Document Number: 89238
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VT1080S
www.vishay.com
VT1080S, VIT1080S
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
8
D = 0.5 D = 0.8
7 D = 0.3
6 D = 0.2
5 D = 0.1
4
3
D = 1.0
T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100
TA = 150 °C
10
TA = 125 °C
1 TA = 100 °C
0.1
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
Revision: 09-Nov-17
3 Document Number: 89238
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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