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Schottky Rectifier. VIT2045C Datasheet

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Schottky Rectifier. VIT2045C Datasheet






VIT2045C Rectifier. Datasheet pdf. Equivalent




VIT2045C Rectifier. Datasheet pdf. Equivalent





Part

VIT2045C

Description

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT2045 C, VIT2045C Vishay General Semiconducto r Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency o peration • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q.
Manufacture

Vishay

Datasheet
Download VIT2045C Datasheet


Vishay VIT2045C

VIT2045C; 101 qualified • Compliant to RoHS Dire ctive 2002/95/EC and in accordance to W EEE 2002/96/EC K 2 VT2045C PIN 1 PIN 3 3 1 VIT2045C PIN 1 PIN 3 2 3 • Halogen-free according to IEC 61249-2-2 1 definition 1 PIN 2 CASE PIN 2 K TY PICAL APPLICATIONS For use in high freq uency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse bat.


Vishay VIT2045C

tery protection. PRIMARY CHARACTERISTIC S IF(AV) VRRM IFSM VF at IF = 10 A TJ m ax. 2 x 10 A 45 V 160 A 0.41 V 150 °C MECHANICAL DATA Case: TO-220AB and TO- 262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halog en-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Term inals: Matte tin pl.


Vishay VIT2045C

ated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity : As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C u nless otherwise noted) PARAMETER Maximu m repetitive peak reverse voltage per d evice Maximum average forward rectified current (fig. 1) p.

Part

VIT2045C

Description

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT2045 C, VIT2045C Vishay General Semiconducto r Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency o peration • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q.
Manufacture

Vishay

Datasheet
Download VIT2045C Datasheet




 VIT2045C
www.DataSheet.co.kr
New Product
VT2045C, VIT2045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 5.0 A
TO-220AB
TMBS ®
TO-262AA
K
VT2045C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VIT2045C
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
45 V
IFSM
160 A
VF at IF = 10 A
0.41 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Operating junction and storage temperature range
TJ, TSTG
VT2045C
VIT2045C
45
20
10
160
- 40 to + 150
UNIT
V
A
A
°C
Document Number: 89349 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




 VIT2045C
www.DataSheet.co.kr
New Product
VT2045C, VIT2045C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current per diode
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.44
0.49
0.33
0.41
-
10
MAX.
-
0.58
-
0.52
2000
30
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
VT2045C
VIT2045C
3.0
2.0
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VT2045C-M3/4W
1.88
TO-262AA
TO-220AB
TO-262AA
VIT2045C-M3/4W
VT2045CHM3/4W (1)
VIT2045CHM3/4W (1)
1.45
1.88
1.45
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
20
16
12
8
4
0
100
110 120 130 140
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
6
5 D = 0.5
D = 0.3
4
D = 0.2
3
D = 0.1
2
D = 0.8
D = 1.0
T
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89349
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




 VIT2045C
www.DataSheet.co.kr
New Product
VT2045C, VIT2045C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 89349 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/






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