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Schottky Rectifier. VIT2080C Datasheet

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Schottky Rectifier. VIT2080C Datasheet






VIT2080C Rectifier. Datasheet pdf. Equivalent




VIT2080C Rectifier. Datasheet pdf. Equivalent





Part

VIT2080C

Description

Dual Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT2080 C, VIT2080C Vishay General Semiconducto r Dual Trench MOS Barrier Schottky Rec tifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power lo sses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q.
Manufacture

Vishay

Datasheet
Download VIT2080C Datasheet


Vishay VIT2080C

VIT2080C; 101 qualified 2 VT2080C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT2080C PIN 1 PIN 3 2 3 1 • Compliant to RoHS Directive 20 02/95/EC and in accordance to WEEE 2002 /96/EC • Halogen-free according to IE C 61249-2-21 definition PIN 2 K TYPIC AL APPLICATIONS For use in high frequen cy DC/DC converters, switching power su pplies, freewheeling diodes, OR-ing dio de, and reverse batter.


Vishay VIT2080C

y protection. PRIMARY CHARACTERISTICS I F(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 80 V 100 A 0.60 V 150 °C ME CHANICAL DATA Case: TO-220AB and TO-262 AA Molding compound meets UL 94 V-0 fla mmability rating Base P/N-M3 - halogen- free, RoHS compliant, and commercial gr ade Base P/NHM3 - halogen-free, RoHS co mpliant, and AEC-Q101 qualified Termina ls: Matte tin plate.


Vishay VIT2080C

d leads, solderable per J-STD-002 and JE SD 22-B102 M3 suffix meets JESD 201 cla ss 1A whisker test, HM3 suffix meets JE SD 201 class 2 whisker test Polarity: A s marked Mounting Torque: 10 in-lbs max imum MAXIMUM RATINGS (TA = 25 °C unle ss otherwise noted) PARAMETER Maximum r epetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per .

Part

VIT2080C

Description

Dual Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT2080 C, VIT2080C Vishay General Semiconducto r Dual Trench MOS Barrier Schottky Rec tifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power lo sses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q.
Manufacture

Vishay

Datasheet
Download VIT2080C Datasheet




 VIT2080C
www.DataSheet.co.kr
New Product
VT2080C, VIT2080C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
VT2080C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VIT2080C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
80 V
IFSM
100 A
VF at IF = 10 A
0.60 V
TJ max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
VT2080C
VIT2080C
80
20
10
100
10 000
- 55 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89239 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




 VIT2080C
www.DataSheet.co.kr
New Product
VT2080C, VIT2080C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current per diode
VR = 80 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.57
0.67
0.52
0.60
20
10
MAX.
-
0.81
-
0.70
600
20
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT2080C
VIT2080C
Typical thermal resistance
per diode
per device
RθJC
3.0
2.0
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT2080C-M3/4W
1.88
TO-262AA
TO-220AB
TO-262AA
VIT2080C-M3/4W
VT2080CHM3/4W (1)
VIT2080CHM3/4W (1)
1.44
1.88
1.44
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
16
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
8
D = 0.5 D = 0.8
7 D = 0.3
6 D = 0.2
5 D = 0.1
D = 1.0
4
3T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89239
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




 VIT2080C
www.DataSheet.co.kr
New Product
VT2080C, VIT2080C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1 TA = 100 °C
0.1
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
Document Number: 89239 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/






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