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VT2080S Dataheets PDF



Part Number VT2080S
Manufacturers Vishay
Logo Vishay
Description Trench MOS Barrier Schottky Rectifier
Datasheet VT2080S DatasheetVT2080S Datasheet (PDF)

www.DataSheet.co.kr New Product VT2080S, VIT2080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 2 VT2080S PIN 1 PIN 2 CASE 3 1 VIT2080S PIN 1 2 3 1 • Compliant to RoHS Directive 2002/95/EC and in accordance to W.

  VT2080S   VT2080S



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www.DataSheet.co.kr New Product VT2080S, VIT2080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 2 VT2080S PIN 1 PIN 2 CASE 3 1 VIT2080S PIN 1 2 3 1 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PIN 2 K PIN 3 PIN 3 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 20 A 80 V 150 A 0.70 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM dV/dt TJ, TSTG VT2080S 80 20 150 10 000 - 55 to + 150 VIT2080S UNIT V A A V/μs °C Document Number: 89240 Revision: 30-Nov-10 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product VT2080S, VIT2080S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A IF = 10 A Instantaneous forward voltage per diode IF = 20 A IF = 5 A IF = 10 A IF = 20 A Reverse current per diode VR = 80 V TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) SYMBOL TYP. 0.52 0.61 0.80 0.46 0.54 0.70 30 20 MAX. 0.92 V 0.78 700 35 μA mA UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJC VT2080S 1.8 VIT2080S UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB TO-262AA TO-220AB TO-262AA Note (1) AEC-Q101 qualified PREFERRED P/N VT2080S-M3/4W VIT2080S-M3/4W VT2.


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