www.vishay.com
VT3060G, VFT3060G, VBT3060G, VIT3060G
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier...
www.vishay.com
VT3060G, VFT3060G, VBT3060G, VIT3060G
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.40 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT3060G
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT3060G
123
PIN 1
PIN 2
PIN 3
TO-262AA K
2 1
VBT3060G
PIN 1
K
PIN 2
HEATSINK
VIT3060G
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package
2 x 15 A 60 V 150 A 0.61 V
150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variations
Common cathode
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package) Not recommended for PCB bottom side wave mounting Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarit...