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Schottky Rectifier. VIT3060G Datasheet







VIT3060G Rectifier. Datasheet pdf. Equivalent






Part

VIT3060G

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VIT3060G Datasheet


Vishay VIT3060G

VIT3060G; www.vishay.com VT3060G, VFT3060G, VBT30 60G, VIT3060G Vishay General Semiconduc tor Dual High Voltage Trench MOS Barri er Schottky Rectifier Ultra Low VF = 0. 40 V at IF = 5 A TO-220AB TMBS ® IT O-220AB VT3060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VBT3060G PIN 1 K PIN 2 HEATSINK V IT3060G 3 2 1 PIN.


Vishay VIT3060G

1 PIN 2 PIN 3 K PRIMARY CHARACTERIS TICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 60 V 150 A 0. 61 V 150 °C TO-220AB, ITO-220AB, TO-26 3AB, TO-262AA Diode variations Common cathode FEATURES • Trench MOS Schot tky technology • Low forward voltage drop, low power losses • High efficie ncy operation • Meets MSL level 1, pe r J-STD-020, LF maximum pea k of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wav e mounting • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: F or definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLI CATIONS For use in high frequency inver ters, switching power supp.



Part

VIT3060G

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VIT3060G Datasheet




 VIT3060G
www.vishay.com
VT3060G, VFT3060G, VBT3060G, VIT3060G
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.40 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT3060G
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT3060G
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VBT3060G
PIN 1
K
PIN 2
HEATSINK
VIT3060G
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
Package
2 x 15 A
60 V
150 A
0.61 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Not recommended for PCB bottom side wave mounting
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA
package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
VAC
Operating junction and storage temperature range
TJ, TSTG
VT3060G
VFT3060G VBT3060G
60
30
15
150
120
1.0
1500
- 55 to + 150
VIT3060G
UNIT
V
A
A
mJ
A
V
°C
Revision: 16-Aug-13
1 Document Number: 89135
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 VIT3060G
www.vishay.com
VT3060G, VFT3060G, VBT3060G, VIT3060G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode (1)
Reverse current per diode (2)
IR = 1.0 mA
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
VR = 60 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF
IR
60 (min.)
0.49
0.53
0.65
0.40
0.46
0.61
-
14
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
0.73
-
-
0.69
850
40
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT3060G
VFT3060G
Typical thermal resistance
per diode
per device
RJC
3.2
1.9
6.2
5.0
VBT3060G
3.2
1.9
VIT3060G
3.2
1.9
UNIT
V
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (EXAMPLE)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT3060G-E3/4W
1.88
ITO-220AB
VFT3060G-E3/4W
1.76
TO-263AB
VBT3060G-E3/4W
1.39
TO-263AB
VBT3060G-E3/8W
1.39
TO-262AA
VIT3060G-E3/4W
1.45
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
36
32 V(B,I)T3060G
28
24
20 VFT3060G
16
12
8
4 Mounted on Specific Heatsink
0
0 25 50 75 100 125
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
14
D = 0.5 D = 0.8
12 D = 0.3
10 D = 0.2
8
D = 0.1
6
4
D = 1.0
T
2
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
Revision: 16-Aug-13
2 Document Number: 89135
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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