www.DataSheet.co.kr
New Product
VT6045C, VIT6045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 10 A
FEATURES
TMBS
TO-220AB
®
• Trench MOS Schottky technology
TO-262AA
• Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
K
2
VT6045C
PIN 1 PIN 3
3 1
VIT6045C
PIN 1 PIN 3
2
3
• Halogen-free according to IEC 61249-2-21 definition
1
PIN 2 CASE
PIN 2 K
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 45 V 320 A 0.47 V 150 °C
MECHANICAL DATA
Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range IF(AV) IFSM TJ, TSTG SYMBOL VRRM VT6045C 45 60 A 30 320 - 40 to + 150 A °C VIT6045C UNIT V
Document Number: 89352 Revision: 23-Mar-11
For technical questions within your region, please contact one of the following: www.vishay.com
[email protected],
[email protected],
[email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
VT6045C, VIT6045C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS IF = 10 A IF = 15 A Instantaneous forward voltage per diode IF = 30 A IF = 10 A IF = 15 A IF = 30 A Reverse current per diode VR = 45 V TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) SYMBOL TYP. 0.44 0.47 0.54 0.33 0.37 0.47 18 MAX. 0.64 V 0.56 3000 50 μA mA UNIT
Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER per diode Typical thermal resistance per device RθJC SYMBOL VT6045C 1.5 °C/W 0.8 VIT6045C UNIT
ORDERING INFORMATION (Example)
PACKAGE TO-220AB TO-262AA TO-220AB TO-262AA Note (1) AEC-Q101 qualified PREFERRED P/N VT6045C-M3/4W VIT6045C-M3/4W VT6045CHM3/4W VIT6045CHM3/4W
(1) (1)
UNIT WEIGHT (g) 1.89 1.46 1.89 1.46
PACKAGE CODE 4W 4W 4W 4W
BASE QUANTITY 50/tube 50/tube 50/tube 50/tube
DELIVERY MODE Tube Tube Tube Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
70 20 18 D = 0.5 D = 0.3 D = 0.8
Average Forward Rectified Current (A)
60 50 40 30 20 10 0 100
Average Power Loss (W)
16 14 12 10 8 6 4 2 0 D = tp/T 0 5 10 15 20 25 tp 30 35 T D = 0.1 D = 1.0 D = 0.2
110
120
130
140
150
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve www.vishay.com 2
Fig. 2 - Forward Power Loss Characteristics Per Diode
For technical questions within your region, please contact one of the following: Document Number: 89352
[email protected],
[email protected],
[email protected] Revision: 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
VT6045C, VIT6045C
Vishay General Semiconductor
100
100 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 000
Instantaneous Forward Current (A)
10 TA = 100 °C TA = 125 °C
Junction Capacitance (pF)
TA = 150 °C
1 TA = 25 °C
1000
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
100 0.1 1 10 100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
TA = 150 °C 10 TA = 125 °C TA = 100 °C 1
Junction to Case
1
0.1 TA = 25 °C
0.01
0.001 20 40 60 80 100
0.1 0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 89352 Revision.