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Schottky Rectifier. VT6045C Datasheet

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Schottky Rectifier. VT6045C Datasheet






VT6045C Rectifier. Datasheet pdf. Equivalent




VT6045C Rectifier. Datasheet pdf. Equivalent





Part

VT6045C

Description

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT6045 C, VIT6045C Vishay General Semiconducto r Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology T O-262AA • Low forward voltage drop, low power losses • High efficiency op eration • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q1.
Manufacture

Vishay

Datasheet
Download VT6045C Datasheet


Vishay VT6045C

VT6045C; 01 qualified • Compliant to RoHS Direc tive 2002/95/EC and in accordance to WE EE 2002/96/EC K 2 VT6045C PIN 1 PIN 3 3 1 VIT6045C PIN 1 PIN 3 2 3 • H alogen-free according to IEC 61249-2-21 definition 1 PIN 2 CASE PIN 2 K TYP ICAL APPLICATIONS For use in high frequ ency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing d iode, and reverse batt.


Vishay VT6045C

ery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ ma x. 2 x 30 A 45 V 320 A 0.47 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-2 62AA Molding compound meets UL 94 V-0 f lammability rating Base P/N-M3 - haloge n-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Termi nals: Matte tin pla.


Vishay VT6045C

ted leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 c lass 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs m aximum MAXIMUM RATINGS (TA = 25 °C un less otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per de vice Maximum average forward rectified current (fig. 1) pe.

Part

VT6045C

Description

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT6045 C, VIT6045C Vishay General Semiconducto r Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology T O-262AA • Low forward voltage drop, low power losses • High efficiency op eration • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q1.
Manufacture

Vishay

Datasheet
Download VT6045C Datasheet




 VT6045C
www.DataSheet.co.kr
New Product
VT6045C, VIT6045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 10 A
TO-220AB
TMBS ®
TO-262AA
K
VT6045C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VIT6045C
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
45 V
IFSM
320 A
VF at IF = 30 A
0.47 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Operating junction and storage temperature range
TJ, TSTG
VT6045C
VIT6045C
45
60
30
320
- 40 to + 150
UNIT
V
A
A
°C
Document Number: 89352 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




 VT6045C
www.DataSheet.co.kr
New Product
VT6045C, VIT6045C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
IF = 10 A
IF = 15 A
IF = 30 A
IF = 10 A
IF = 15 A
IF = 30 A
Reverse current per diode
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.44
0.47
0.54
0.33
0.37
0.47
-
18
MAX.
-
-
0.64
-
-
0.56
3000
50
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
VT6045C
VIT6045C
1.5
0.8
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VT6045C-M3/4W
1.89
TO-262AA
TO-220AB
TO-262AA
VIT6045C-M3/4W
VT6045CHM3/4W (1)
VIT6045CHM3/4W (1)
1.46
1.89
1.46
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
70
60
50
40
30
20
10
0
100
110 120 130 140
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
20
18
D = 0.5
D = 0.3
D = 0.8
16
14
D = 0.2
12
10
D = 0.1
8
6
D = 1.0
T
4
2
D = tp/T
tp
0
0 5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89352
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




 VT6045C
www.DataSheet.co.kr
New Product
VT6045C, VIT6045C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Voltage (V)
0.7
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
100 000
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 89352 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/






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