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VT6045C Dataheets PDF



Part Number VT6045C
Manufacturers Vishay
Logo Vishay
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VT6045C DatasheetVT6045C Datasheet (PDF)

www.DataSheet.co.kr New Product VT6045C, VIT6045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC K 2 VT6045C PIN 1 PIN 3 3 1 VIT6045C.

  VT6045C   VT6045C


Document
www.DataSheet.co.kr New Product VT6045C, VIT6045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC K 2 VT6045C PIN 1 PIN 3 3 1 VIT6045C PIN 1 PIN 3 2 3 • Halogen-free according to IEC 61249-2-21 definition 1 PIN 2 CASE PIN 2 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 45 V 320 A 0.47 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range IF(AV) IFSM TJ, TSTG SYMBOL VRRM VT6045C 45 60 A 30 320 - 40 to + 150 A °C VIT6045C UNIT V Document Number: 89352 Revision: 23-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product VT6045C, VIT6045C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 10 A IF = 15 A Instantaneous forward voltage per diode IF = 30 A IF = 10 A IF = 15 A IF = 30 A Reverse current per diode VR = 45 V TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) SYMBOL TYP. 0.44 0.47 0.54 0.33 0.37 0.47 18 MAX. 0.64 V 0.56 3000 50 μA mA UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER per diode Typical thermal resistance per device RθJC SYMBOL VT6045C 1.5 °C/W 0.8 VIT6045C UNIT ORDERING INFORMATION (Example) PACKAGE TO-220AB TO-262AA TO-220AB TO-262AA Note (1) AEC-Q101 qualified PREFERRED P/N VT6045C-M3/4W VIT6045C-M3/4W VT6045CHM3/4W VIT6045CHM3/4W (1) (1) UNIT WEIGHT (g) 1.89 1.46 1.89 1.46 PACKAGE CODE 4W 4W 4W 4W BASE QUANTITY 50/tube 50/tube 50/tube 50/tube DELIVERY MODE Tube Tube Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 70 20 18 D = 0.5 D = 0.3 D = 0.8 Average Forward Rectified Current (A) 60 50 40 30 20 10 0 100 Average Power Loss (W) 16 14 12 10 8 6 4 2 0 D = tp/T 0 5 10 15 20 25 tp 30 35 T D = 0.1 D = 1.0 D = 0.2 110 120 130 140 150 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve www.vishay.com 2 Fig. 2 - Forward Power Loss Characteristics Per Diode For technical questions within your region, please contact one of the following: Document Number: 89352 [email protected], [email protected], [email protected] Revision: 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product VT6045C, VIT6045C Vishay General Semiconductor 100 100 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 000 Instantaneous Forward Current (A) 10 TA = 100 °C TA = 125 °C Junction Capacitance (pF) TA = 150 °C 1 TA = 25 °C 1000 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 Junction to Case 1 0.1 TA = 25 °C 0.01 0.001 20 40 60 80 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Document Number: 89352 Revision.


VIT6045C VT6045C VIT760


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