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Schottky Rectifier. VSSB3L6S Datasheet

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Schottky Rectifier. VSSB3L6S Datasheet






VSSB3L6S Rectifier. Datasheet pdf. Equivalent




VSSB3L6S Rectifier. Datasheet pdf. Equivalent





Part

VSSB3L6S

Description

Surface Mount Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VSSB3L 6S Vishay General Semiconductor Surfac e Mount Trench MOS Barrier Schottky Rec tifier FEATURES TMBS ® • Low profil e package • Ideal for automated place ment • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Not recommende.
Manufacture

Vishay

Datasheet
Download VSSB3L6S Datasheet


Vishay VSSB3L6S

VSSB3L6S; d for PCB bottom side wave mounting DO- 214AA (SMB) • Compliant to RoHS Dire ctive 2002/95/EC and in accordance to W EEE 2002/96/EC • Halogen-free accordi ng to IEC 61249-2-21 definition 3.0 A 6 0 V 80 A 0.42 V 150 °C PRIMARY CHARAC TERISTICS IF(AV) VRRM IFSM VF at IF = 3 .0 A TJ max. MECHANICAL DATA Case: DO- 214AA (SMB) Molding compound meets UL 9 4 V-0 flammability rati.


Vishay VSSB3L6S

ng Base P/N-M3 - halogen-free, RoHS comp liant, and commercial grade Terminals: Matte tin plated leads, solderable J-ST D-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity : Color band denotes the cathode end pe r TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, free wheeling, DC/DC converters, and polarit y protection appli.


Vishay VSSB3L6S

cations. MAXIMUM RATINGS (TA = 25 °C u nless otherwise noted) PARAMETER Device marking code Maximum repetitive peak r everse voltage Maximum DC forward curre nt Peak forward surge current 10 ms sin gle half sine-wave superimposed on rate d load Voltage rate of change (rated VR ) Operating junction and storage temper ature range Notes (1) Mounted on 10 mm x 10 mm pad areas, .

Part

VSSB3L6S

Description

Surface Mount Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VSSB3L 6S Vishay General Semiconductor Surfac e Mount Trench MOS Barrier Schottky Rec tifier FEATURES TMBS ® • Low profil e package • Ideal for automated place ment • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Not recommende.
Manufacture

Vishay

Datasheet
Download VSSB3L6S Datasheet




 VSSB3L6S
www.DataSheet.co.kr
New Product
VSSB3L6S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS®
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
60 V
IFSM
80 A
VF at IF = 3.0 A
0.42 V
TJ max.
150 °C
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
Notes
(1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB
(2) Free air, mounted on recommended copper pad area
VSSB3L6S
3L6
60
3.0
2.6
80
10 000
- 55 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89347 For technical questions within your region, please contact one of the following:
Revision: 18-Oct-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VSSB3L6S
www.DataSheet.co.kr
New Product
VSSB3L6S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 3.0 A
TA = 25 °C
TA = 125 °C
Reverse current
VR = 60 V
TA = 25 °C
TA = 125 °C
Typical junction capacitance
4.0 V, 1 MHz
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
VF (1)
IR (2)
CJ
0.49
0.42
-
5
358
MAX.
0.59
0.52
1200
25
-
UNIT
V
μA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
VSSB3L6S
Typical thermal resistance
RθJA (1)
RθJM (2)
115
13
Notes
(1) Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance RθJA - junction to ambient
(2) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB; RθJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSSB3L6S-M3/52T
0.096
52T
VSSB3L6S-M3/5BT
0.096
5BT
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
3.5
3.0
2.5
2.0
1.5
1.0
0.5 TM Measured at Terminal
0
0 25 50 75 100 125 150
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
T
D = tp/T
tp
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89347
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 18-Oct-10
Datasheet pdf - http://www.DataSheet4U.net/




 VSSB3L6S
www.DataSheet.co.kr
New Product
VSSB3L6S
Vishay General Semiconductor
100
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.1
TA = 25 °C
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
1.0
Fig. 3 - Typical Instantaneous Forward Characteristics
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1000
Junction to Ambient
100
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.085 (2.159)
MAX.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.220 REF.
Document Number: 89347 For technical questions within your region, please contact one of the following:
Revision: 18-Oct-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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