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VSSB410S Dataheets PDF



Part Number VSSB410S
Manufacturers Vishay
Logo Vishay
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet VSSB410S DatasheetVSSB410S Datasheet (PDF)

www.DataSheet.co.kr New Product VSSB410S Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Low profile package TMBS ® • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in DO-214AA (SMB) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(A.

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www.DataSheet.co.kr New Product VSSB410S Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Low profile package TMBS ® • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in DO-214AA (SMB) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 4.0 A TJ max. 4.0 A 100 V 80 A 50 mJ 0.61 V 150 °C For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C Operating junction and storage temperature range Notes (1) Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 P.C.B. (2) Free air, mounted on recommended copper pad area VRRM IF IF (1) (2) SYMBOL VSSB410S V4B 100 4.0 UNIT V A 1.9 80 50 1.0 - 40 to + 150 A mJ A °C IFSM EAS IRRM TJ, TSTG Document Number: 89140 Revision: 25-Aug-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product VSSB410S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage Instantaneous forward voltage TEST CONDITIONS IR = 1.0 mA IF = 4.0 A TA = 25 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C CJ IR (2) SYMBOL VBR VF (1) TYP. 100 (minimum) 0.68 0.61 1.5 1.2 7.0 3.6 230 MAX. 0.77 V 0.69 250 20 µA mA µA mA pF UNIT V VR = 70 V Reverse current VR = 100 V Typical junction capacitance 4.0 V, 1 MHz Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJA (1) RθJM (2) VSSB410S 120 °C/W 15 UNIT Notes Free air, mounted on recommended P.C.B. 1 oz. pad area. Thermal resistance RθJA - junction to ambient (2) Units mounted on P.C.B. with 14 mm x 14 mm copper pad areas. R θJM - junction to mount (1) ORDERING INFORMATION (Example) PREFERRED P/N VSSB410S-E3/52T VSSB410S-E3/5BT UNIT WEIGHT (g) 0.096 0.096 PREFERRED PACKAGE CODE 52T 5BT BASE QUANTITY 750 3200 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 5.0 3.2 2.8 D = 0.5 D = 0.8 D = 0.3 D = 0.2 Average Forward Rectified Current (A) 4.5 Average Power Loss (W) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 TM Measured at Terminal 2.4 2.0 D = 0.1 D = 1.0 1.6 1.2 0.8 0.4 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 D = tp/T tp T TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89140 Revision: 25-Aug-09 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product VSSB410S Vishay General Semiconductor 100 1000 TA = 150 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 Junction Capacitance (pF) TA = 125 °C 1 TA = 100 °C 100 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 1000 10 TA = 150 °C TA = 125 °C TA = 100 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Junction to Ambient 1 100 0.1 0.01 TA = 25 °C 10 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 .


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