DatasheetsPDF.com

Schottky Rectifier. VSSB410S Datasheet

DatasheetsPDF.com

Schottky Rectifier. VSSB410S Datasheet






VSSB410S Rectifier. Datasheet pdf. Equivalent




VSSB410S Rectifier. Datasheet pdf. Equivalent





Part

VSSB410S

Description

Surface Mount Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VSSB41 0S Vishay General Semiconductor Surfac e Mount Trench MOS Barrier Schottky Rec tifier FEATURES • Low profile package TMBS ® • Ideal for automated pla cement • Trench MOS Schottky technolo gy • Low power losses, high efficienc y • Low forward voltage drop • Meet s MSL level 1, per J-STD-020, LF maximu m peak of 260 °C • Compliant to.
Manufacture

Vishay

Datasheet
Download VSSB410S Datasheet


Vishay VSSB410S

VSSB410S; RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in DO-214AA (SMB) TYPICAL APPLICATIONS PRIMARY CHARACTE RISTICS IF(AV) VRRM IFSM EAS VF at IF = 4.0 A TJ max. 4.0 A 100 V 80 A 50 mJ 0 .61 V 150 °C For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity prot ection applications. MECHANICAL DATA C ase: DO-214AA (SMB).


Vishay VSSB410S

Molding compound meets UL 94 V-0 flamma bility rating Base P/N-E3 - RoHS compli ant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 2 01 class 1A whisker test Polarity: Colo r band denotes the cathode end per MAX IMUM RATINGS (TA = 25 °C unless otherw ise noted) PARAMETER Device marking cod e Maximum repetitiv.


Vishay VSSB410S

e peak reverse voltage Maximum DC forwar d current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH Peak r epetitive reverse current at tp = 2 µs , 1 kHz, TJ = 38 °C ± 2 °C Operating junction and storage temperature range Notes (1) Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 P.C.B.

Part

VSSB410S

Description

Surface Mount Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VSSB41 0S Vishay General Semiconductor Surfac e Mount Trench MOS Barrier Schottky Rec tifier FEATURES • Low profile package TMBS ® • Ideal for automated pla cement • Trench MOS Schottky technolo gy • Low power losses, high efficienc y • Low forward voltage drop • Meet s MSL level 1, per J-STD-020, LF maximu m peak of 260 °C • Compliant to.
Manufacture

Vishay

Datasheet
Download VSSB410S Datasheet




 VSSB410S
www.DataSheet.co.kr
New Product
VSSB410S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS®
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV)
4.0 A
VRRM
100 V
IFSM
80 A
EAS 50 mJ
VF at IF = 4.0 A
0.61 V
TJ max.
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C
Operating junction and storage temperature range
EAS
IRRM
TJ, TSTG
Notes
(1) Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 P.C.B.
(2) Free air, mounted on recommended copper pad area
VSSB410S
V4B
100
4.0
1.9
80
50
1.0
- 40 to + 150
UNIT
V
A
A
mJ
A
°C
Document Number: 89140
Revision: 25-Aug-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VSSB410S
www.DataSheet.co.kr
New Product
VSSB410S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
Reverse current
IR = 1.0 mA
IF = 4.0 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
100 (minimum)
0.68
0.61
1.5
1.2
7.0
3.6
Typical junction capacitance
4.0 V, 1 MHz
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
CJ 230
MAX.
-
0.77
0.69
-
-
250
20
-
UNIT
V
V
µA
mA
µA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSB410S
Typical thermal resistance
RθJA (1)
RθJM (2)
120
15
Notes
(1) Free air, mounted on recommended P.C.B. 1 oz. pad area. Thermal resistance RθJA - junction to ambient
(2) Units mounted on P.C.B. with 14 mm x 14 mm copper pad areas. RθJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSSB410S-E3/52T
0.096
52T
VSSB410S-E3/5BT
0.096
5BT
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 TM Measured at Terminal
0
0 25 50 75 100 125
TM - Mount Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
3.2
D = 0.5 D = 0.8
2.8 D = 0.3
D = 0.2
2.4
2.0
D = 0.1
1.6
D = 1.0
1.2 T
0.8
0.4
D = tp/T
tp
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89140
Revision: 25-Aug-09
Datasheet pdf - http://www.DataSheet4U.net/




 VSSB410S
www.DataSheet.co.kr
New Product
VSSB410S
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
10 TA = 150 °C
1 TA = 125 °C
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1000
Junction to Ambient
100
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.085 (2.159)
MAX.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.220 REF.
Document Number: 89140
Revision: 25-Aug-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






Recommended third-party VSSB410S Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)