VSSB410S

www.DataSheet.co.kr New Product VSSB410S Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES Low profile package TMBS ® Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in DO-214AA (SMB) TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 4.0 A TJ max. 4.0 A 100 V 80 A 50 mJ 0.61 V 150 °C For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C Operating junction and storage temperature range Notes (1) Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 P.C.B. (2) Free air, moun...