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Schottky Rectifier. VSSB420S Datasheet

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Schottky Rectifier. VSSB420S Datasheet






VSSB420S Rectifier. Datasheet pdf. Equivalent




VSSB420S Rectifier. Datasheet pdf. Equivalent





Part

VSSB420S

Description

Surface Mount Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VSSB420S Datasheet


Vishay VSSB420S

VSSB420S; www.DataSheet.co.kr New Product VSSB42 0S Vishay General Semiconductor Surfac e Mount Trench MOS Barrier Schottky Rec tifier FEATURES TMBS® • Low profile package • Ideal for automated placeme nt • Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop • Meets MS L level 1, per J-STD-020, LF maximum pe ak of 260 °C DO-214AA (SMB) •.


Vishay VSSB420S

Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2 -21 definition TYPICAL APPLICATIONS PR IMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 4.0 A TJ max. 4.0 A 200 V 40 A 0.71 V 150 °C For use in high freq uency converters, freewheeling diodes, DC/DC converters and polarity protectio n applications. MECH.


Vishay VSSB420S

ANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and R oHS compliant, commercial grade Termina ls: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix me ets JESD 201 class 1A whisker test Pola rity: Color band denotes the cathode en d per MAXIMUM RATINGS (TA = 25 °C unl ess otherwise noted.



Part

VSSB420S

Description

Surface Mount Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VSSB420S Datasheet




 VSSB420S
www.DataSheet.co.kr
New Product
VSSB420S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS®
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV)
4.0 A
VRRM
200 V
IFSM
40 A
VF at IF = 4.0 A
0.71 V
TJ max.
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
Notes
(1) Units mounted on PCB with 20 mm x 20 mm pad areas
(2) Free air, mounted on recommended PCB 1 oz. pad area
VSSB420S
V4D
200
4.0
1.8
40
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89317 For technical questions within your region, please contact one of the following:
Revision: 10-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/





 VSSB420S
www.DataSheet.co.kr
New Product
VSSB420S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current per diode
Typical junction capacitance
IF = 4.0 A
VR = 180 V
VR = 200 V
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
CJ
1.44
0.71
3
0.7
4
1.1
120
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
1.90
0.80
-
-
150
10
-
UNIT
V
μA
mA
μA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSB420S
Typical thermal resistance
RJA (1)
RJM (2)
120
15
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RJA - junction to ambient
(2) Units mounted on PCB with 20 mm x 20 mm copper pad areas; thermal resistance RJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSSB420S-M3/52T
0.096
52T
VSSB420S-M3/5BT
0.096
5BT
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 TM Measured at Terminal
0
0 25 50 75 100 125
TM - Mount Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
4
D = 0.5 D = 0.8
3.5 D = 0.3
D = 0.2
3.0
2.5
D = 0.1
2.0
D = 1.0
1.5 T
1.0
0.5
D = tp/T
tp
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89317
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 10-Nov-10
Datasheet pdf - http://www.DataSheet4U.net/





 VSSB420S
www.DataSheet.co.kr
New Product
VSSB420S
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
0.001
0.0001
TA = 25 °C
0.00001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1000
Junction to Ambient
100
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.085 (2.159)
MAX.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.220 REF.
Document Number: 89317 For technical questions within your region, please contact one of the following:
Revision: 10-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



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