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Recovery Diodes. VSKJ196-xxPBF Datasheet

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Recovery Diodes. VSKJ196-xxPBF Datasheet






VSKJ196-xxPBF Diodes. Datasheet pdf. Equivalent




VSKJ196-xxPBF Diodes. Datasheet pdf. Equivalent





Part

VSKJ196-xxPBF

Description

Standard Recovery Diodes



Feature


www.DataSheet.co.kr VSK.166..PbF, VSK.1 96..PbF, VSK.236..PbF Series Vishay Sem iconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules ) FEATURES • High voltage • Electri cally isolated by DBC ceramic (AI2O3) 3500 VRMS isolating voltage • Indu strial standard package • High surge capability • Glass passivated chips Modules uses high voltage pow.
Manufacture

Vishay Siliconix

Datasheet
Download VSKJ196-xxPBF Datasheet


Vishay Siliconix VSKJ196-xxPBF

VSKJ196-xxPBF; er diodes in four basic configurations Simple mounting INT-A-PAK • UL ap proved file E78996 • Compliant to RoH S directive 2002/95/EC • Designed and qualified for multiple level PRODUCT SUMMARY IF(AV) Type 165 A to 230 A Modu les - Diode, High Voltage APPLICATIONS • DC motor control and drives • Ba ttery chargers • Welders • Power co nverters MAJOR RATINGS AND CHARAC.


Vishay Siliconix VSKJ196-xxPBF

TERISTICS SYMBOL IF(AV) IF(RMS) IFSM I2t I2t VRRM TJ Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS VSK.166.. 165 TC 100 260 4000 4200 80 73 798 VSK.196.. 195 100 305 4750 4980 113 103 1130 400 to 1600 - 40 to 150 VSK.236.. 230 100 3 60 5500 5765 151 138 1516 kA2s kA2s V °C A UNITS A °C ELECTRICAL SPECIFI CATIONS VOLTAGE RATINGS TYPE NUMBER VOL TAGE CODE 04 VSK.166 VSK.


Vishay Siliconix VSKJ196-xxPBF

.196 VSK.236 08 12 14 16 VRRM, MAXIMUM R EPETITIVE PEAK REVERSE VOLTAGE V 400 80 0 1200 1400 1600 VRSM, MAXIMUM NON-REPE TITIVE PEAK REVERSE VOLTAGE V 500 900 1 300 1500 1700 20 IRRM AT 150 °C mA Do cument Number: 94357 Revision: 20-May-1 0 For technical questions within your region, please contact one of the follo wing: DiodesAmericas@vishay.com, Diodes Asia@vishay.com, Di.

Part

VSKJ196-xxPBF

Description

Standard Recovery Diodes



Feature


www.DataSheet.co.kr VSK.166..PbF, VSK.1 96..PbF, VSK.236..PbF Series Vishay Sem iconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules ) FEATURES • High voltage • Electri cally isolated by DBC ceramic (AI2O3) 3500 VRMS isolating voltage • Indu strial standard package • High surge capability • Glass passivated chips Modules uses high voltage pow.
Manufacture

Vishay Siliconix

Datasheet
Download VSKJ196-xxPBF Datasheet




 VSKJ196-xxPBF
www.DataSheet.co.kr
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors
Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
INT-A-PAK
FEATURES
• High voltage
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Modules uses high voltage power diodes in four basic
configurations
• Simple mounting
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for multiple level
PRODUCT SUMMARY
IF(AV)
Type
165 A to 230 A
Modules - Diode, High Voltage
APPLICATIONS
• DC motor control and drives
• Battery chargers
• Welders
• Power converters
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.166..
IF(AV)
IF(RMS)
IFSM
TC
50 Hz
60 Hz
165
100
260
4000
4200
50 Hz
I2t
60 Hz
80
73
I2t 798
VRRM
TJ
Range
VSK.196..
195
100
305
4750
4980
113
103
1130
400 to 1600
- 40 to 150
VSK.236..
230
100
360
5500
5765
151
138
1516
UNITS
A
°C
A
kA2s
kA2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VSK.166
VSK.196
VSK.236
04
08
12
14
16
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
400
800
1200
1400
1600
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
IRRM
AT 150 °C
mA
20
Document Number: 94357 For technical questions within your region, please contact one of the following:
Revision: 20-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VSKJ196-xxPBF
www.DataSheet.co.kr
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A
(INT-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state
current at case temperature
IF(AV)
Maximum RMS on-state current
IF(RMS)
Maximum peak, one-cycle
on-state, non-repetitive
surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
I2t
VF(TO)1
VF(TO)2
rt1
rt2
Maximum forward voltage drop
VFM
TEST CONDITIONS
VSK.166 VSK.196 VSK.236
180° conduction, half sine wave
165 195 230
100 100 100
260 305 360
t = 10 ms
t = 8.3 ms
No voltage
reapplied
4000
4200
4750
4980
5500
5765
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
3350
3500
80
73
4000
4200
113
103
4630
4850
151
138
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
56 80 107
52 73 98
t = 0.1 ms to 10 ms, no voltage reapplied
798 1130 1516
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum
(I > x IF(AV)), TJ maximum
0.73
0.88
0.69
0.78
0.7
0.83
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 1.5 1.3 1.2
(I > x IF(AV)), TJ maximum
IFM = x IF(AV), TJ = 25 °C, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.26
1.43
1.2
1.38
1.07
1.46
UNITS
A
°C
A
kA2s
kA2s
V
m
V
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
SYMBOL
TEST CONDITIONS
IRRM
VINS
TJ = 150 °C
50 Hz, circuit to base, all terminals shorted,
t=1s
VSK.166 VSK.196 VSK.236 UNITS
20 mA
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
IAP to heatsink
busbar to IAP
TJ, TStg
RthJC
RthCS
Approximate weight
Case style
DC operation
Mounting surface smooth, flat and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound. Lubricated threads.
VALUES
UNITS
VSK.166 VSK.196 VSK.236
- 40 to 150
°C
0.2 0.16 0.14
K/W
0.05
4 to 6
200
7.1
INT-A-PAK
Nm
g
oz.
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94357
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-May-10
Datasheet pdf - http://www.DataSheet4U.net/




 VSKJ196-xxPBF
www.DataSheet.co.kr
VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors
(INT-A-PAK Power Modules)
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
180° 120° 90°
60°
30°
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
180° 120°
90°
60°
30°
VSK.166
0.025 0.03 0.038 0.055 0.089 0.018 0.031 0.041 0.057 0.089
VSK.196
0.016 0.019 0.024 0.034 0.053 0.012 0.02 0.026 0.035 0.054
VSK.236
0.009 0.010 0.014 0.018 0.025 0.008 0.012 0.015 0.019 0.025
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
150
VSK.166.. Series
140 RthJC (DC) = 0.20 K/W
130
Ø
120 Conduction angle
110
100
30°
60°
90 90°
120°
80 180°
70
0
40 80 120 160 200
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
150
VSK.166.. Series
140 RthJC (DC) = 0.20 K/W
130
Ø
120 Conduction period
110
100
90
80
70
0
30°
60°
90°
120°
180°
DC
50 100 150 200 250
300
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
250
180°
120°
200 90°
60°
30°
150 RMS limit
100
Ø
Conduction angle
50 VSK.166.. Series
TJ = 150 °C
0
0 40 80 120 160 200
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
300
DC
180°
250 120°
90°
200
60°
30°
RMS limit
150
Ø
100 Conduction period
50
0
0
VSK.166.. Series
Per junction
TJ = 150 °C
50 100 150 200 250 300
Average Forward Current (A)
Fig. 4 - On-State Power Loss Characteristics
Document Number: 94357 For technical questions within your region, please contact one of the following:
Revision: 20-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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