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VSKD236-xxPBF Dataheets PDF



Part Number VSKD236-xxPBF
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Standard Recovery Diodes
Datasheet VSKD236-xxPBF DatasheetVSKD236-xxPBF Datasheet (PDF)

www.DataSheet.co.kr VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power diodes in four basic configurations • Simple mounting INT-A-PAK • UL approved file E78996 • Compliant to RoHS directive 2002/9.

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www.DataSheet.co.kr VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power diodes in four basic configurations • Simple mounting INT-A-PAK • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for multiple level PRODUCT SUMMARY IF(AV) Type 165 A to 230 A Modules - Diode, High Voltage APPLICATIONS • DC motor control and drives • Battery chargers • Welders • Power converters MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) IF(RMS) IFSM I2t I2t VRRM TJ Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS VSK.166.. 165 TC 100 260 4000 4200 80 73 798 VSK.196.. 195 100 305 4750 4980 113 103 1130 400 to 1600 - 40 to 150 VSK.236.. 230 100 360 5500 5765 151 138 1516 kA2s kA2s V °C A UNITS A °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 VSK.166 VSK.196 VSK.236 08 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1500 1700 20 IRRM AT 150 °C mA Document Number: 94357 Revision: 20-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) FORWARD CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle on-state, non-repetitive surge current SYMBOL IF(AV) IF(RMS) t = 10 ms IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I 2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VF(TO)1 VF(TO)2 rt1 rt2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sine half wave, initial TJ = TJ maximum TEST CONDITIONS 180° conduction, half sine wave VSK.166 VSK.196 VSK.236 165 100 260 4000 4200 3350 3500 80 73 56 52 798 0.73 0.88 1.5 1.26 1.43 195 100 305 4750 4980 4000 4200 113 103 80 73 1130 0.69 0.78 1.3 1.2 1.38 230 100 360 5500 5765 4630 4850 151 138 107 98 1516 0.7 0.83 1.2 1.07 1.46 V kA2s V kA2s A UNITS A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum (I >  x IF(AV)), TJ maximum (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum (I >  x IF(AV)), TJ maximum IFM =  x IF(AV), TJ = 25 °C, 180° conduction Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 Low level value of threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state Maximum forward voltage drop m BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage SYMBOL IRRM VINS TJ = 150 °C 50 Hz, circuit to base, all terminals shorted, t=1s TEST CONDITIONS VSK.166 VSK.196 VSK.236 20 3500 UNITS mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink per module Mounting torque ± 10 % Approximate weight Case style IAP to heatsink busbar to IAP SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface smooth, flat and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 0.2 TEST CONDITIONS VALUES VSK.166 VSK.196 VSK.236 - 40 to 150 0.16 0.05 4 to 6 200 7.1 INT-A-PAK Nm g oz. 0.14 K/W UNITS °C www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94357 Revision: 20-May-10 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors (INT-A-PAK Power Modules) R CONDUCTION PER JUNCTION DEVICES 180° VSK.166 VSK.196 VSK.236 0.025 0.016 0.009 SINUSOIDAL CONDUCTION AT TJ MAXIMUM 120° 0.03 0.019 0.010 90° 0.038 0.024 0.014 60° 0.055 0.034 0.018 30° 0.089 0.053 0.025 180° 0.018 0.012 0.008 RECTANGULAR CONDUCTION AT TJ MAXIMUM 120° 0.031 0.02 0.012 90° 0.041 0.026 0.015 60° 0.057 0.035 0.019 30° 0.089 0.054 0.025 K/W UNITS Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 150 250 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 140 130 VSK.166.. Series RthJC (DC) = 0.20 K/W 200 Ø 180° 120° 90° 60° 30° RMS li.


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